Browsing by Author "Berghmans, Bart"
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Publication Cesium near-surface concentration in low energy, negative mode dynamic SIMS
Meeting abstract2007-10, SIMS XVI, 29/10/2007Publication Cesium near-surface concentration in low energy, negative mode dynamic SIMS
Journal article2008, Applied Surface Science, (255) 4, p.1316-1319Publication Cesium retention during sputtering with low energy Cs+ and oxygen flooding
Journal article2011-01, Surface and Interface Analysis, (43) 1_2, p.225-227Publication Depth resolution and surface transients in crystalline Silicon at ultra low energies
Meeting abstract2009-09, 17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII, 14/08/2009, p.247Publication Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1H5-C1H13Publication Experimental studies of dose retention and activation in FinFet-based structures
Proceedings paper2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009Publication On the apparent decay length of metal at the metal-oxide/Si interface
Oral presentation2007, SIMS XVIPublication The effect of oxygen during irradiation of silicon with low energy Cs+ ions
;Berghmans, BartJournal article2009, Journal of Applied Physics, (106) 3, p.33509Publication The effect of oxygen in ULE-SIMS with Cs+ ions
;Berghmans, BartMeeting abstract2008, SIMS Europe: 6th European Workshop on Secondary Ion Mass Spectrometry. Book of Abstracts, 14/09/2008, p.p32Publication The fate of the (reactive) primary ion: sputtering and desorption
Proceedings paper2007, SIMS XVI, 29/10/2007Publication The fate of the (reactive) primary ion: sputtering and desorption
Journal article2008, Applied Surface Science, (255) 4, p.1206-1214Publication Towards the ultimate depth resolution limits in SIMS
Proceedings paper2010, The International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions at Seikei University - SISS-12, 10/06/2010