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Browsing by Author "Berghmans, Bart"

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    Cesium near-surface concentration in low energy, negative mode dynamic SIMS

    Berghmans, Bart
    ;
    Van Daele, Benny
    ;
    Geenen, Luc
    ;
    Conard, Thierry  
    ;
    Franquet, Alexis  
    Meeting abstract
    2007-10, SIMS XVI, 29/10/2007
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    Cesium near-surface concentration in low energy, negative mode dynamic SIMS

    Berghmans, Bart
    ;
    Van Daele, Benny
    ;
    Geenen, Luc
    ;
    Conard, Thierry  
    ;
    Franquet, Alexis  
    Journal article
    2008, Applied Surface Science, (255) 4, p.1316-1319
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    Cesium retention during sputtering with low energy Cs+ and oxygen flooding

    Berghmans, Bart
    ;
    Rip, Jens  
    ;
    Vandervorst, Wilfried  
    Journal article
    2011-01, Surface and Interface Analysis, (43) 1_2, p.225-227
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    Depth resolution and surface transients in crystalline Silicon at ultra low energies

    Goossens, Jozefien
    ;
    Berghmans, Bart
    ;
    Franquet, Alexis  
    ;
    Nguyen, Duy
    ;
    Delmotte, Joris
    ;
    Geenen, Luc
    Meeting abstract
    2009-09, 17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII, 14/08/2009, p.247
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    Direct measurement of cesium retention for sputtering with low energy Cs+ and oxygen background flooding

    Berghmans, Bart
    ;
    Vandervorst, Wilfried  
    Meeting abstract
    2009, SIMS XVII, 13/09/2009
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    Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

    Mody, Jay
    ;
    Duffy, Ray
    ;
    Eyben, Pierre  
    ;
    Goossens, Jozefien
    ;
    Moussa, Alain  
    ;
    Polspoel, Wouter
    Journal article
    2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1H5-C1H13
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    Experimental studies of dose retention and activation in FinFet-based structures

    Mody, Jay
    ;
    Duffy, Ray
    ;
    Eyben, Pierre  
    ;
    Goossens, Jozefien
    ;
    Moussa, Alain  
    ;
    Polspoel, Wouter
    Proceedings paper
    2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009
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    On the apparent decay length of metal at the metal-oxide/Si interface

    Conard, Thierry  
    ;
    Vandervorst, Wilfried  
    ;
    Franquet, Alexis  
    ;
    Berghmans, Bart
    ;
    Van Elshocht, Sven  
    Oral presentation
    2007, SIMS XVI
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    The effect of oxygen during irradiation of silicon with low energy Cs+ ions

    Berghmans, Bart
    ;
    Vandervorst, Wilfried  
    Journal article
    2009, Journal of Applied Physics, (106) 3, p.33509
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    The effect of oxygen in ULE-SIMS with Cs+ ions

    Berghmans, Bart
    ;
    Vandervorst, Wilfried  
    Meeting abstract
    2008, SIMS Europe: 6th European Workshop on Secondary Ion Mass Spectrometry. Book of Abstracts, 14/09/2008, p.p32
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    The fate of the (reactive) primary ion: sputtering and desorption

    Vandervorst, Wilfried  
    ;
    Janssens, Tom
    ;
    Berghmans, Bart
    ;
    Huyghebaert, Cedric  
    Proceedings paper
    2007, SIMS XVI, 29/10/2007
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    The fate of the (reactive) primary ion: sputtering and desorption

    Vandervorst, Wilfried  
    ;
    Janssens, Tom
    ;
    Huyghebaert, Cedric  
    ;
    Berghmans, Bart
    Journal article
    2008, Applied Surface Science, (255) 4, p.1206-1214
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    Towards the ultimate depth resolution limits in SIMS

    Vandervorst, Wilfried  
    ;
    Berghmans, Bart
    ;
    Van Hove, N.
    ;
    Koelling, Sebastian
    Proceedings paper
    2010, The International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions at Seikei University - SISS-12, 10/06/2010

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