Browsing by Author "Boudier, Dimitri"

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Journal article

2016, Semiconductor Science and Technology, (31) 12, p.124006

Publication

Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

Boudier, Dimitri

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Cretu, Bogdan

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Journal article

2018, Solid-State Electronics, 143, p.27-32

Publication

Discussion of the flicker noise origin at very low temperature and polarization operation

Boudier, Dimitri

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Cretu, Bogdan

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Claeys, Cor

Proceedings paper

2019, 25th Int. Conf on Noise and 1/f Fluctuations, 18/06/2019, p.45-48

Publication

Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures

Boudier, Dimitri

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Cretu, Bogdan

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Proceedings paper

2018, Joint International EUROSOI Workshop and International Conference on Ultimate Silicon Integration- EUROSOI-ULIS, 19/03/2018, p.1-4

Publication

Generation-recombination noise in advanced CMOS devices

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Oliveira, Alberto

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Boudier, Dimitri

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Mitard, Jerome

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Witters, Liesbeth

Proceedings paper

2016, 14th Symposium on High Purity and High Mobility Semiconductors, 2/10/2016, p.111-120

Publication

Impact of defects on transport in nanodevices

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Hsu, Brent

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Boudier, Dimitri

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Cretu, Bogdan

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Eneman, Geert

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Meeting abstract

2018-06, E-MRS Spring Meeting Symposium G: Carrier Transport, Photonics and Sensing in Group IV-based and Other Semiconductors ..., 18/06/2018, p.G.8.6

Publication

Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization

Cretu, Bogdan

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Boudier, Dimitri

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Claeys, Cor

Journal article

2020, Solid-State Electronics, 171, p.107771

Publication

Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs

Boudier, Dimitri

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Cretu, Bogdan

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Proceedings paper

2019, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 1/04/2019

Publication

Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs

Boudier, Dimitri

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Cretu, Bogdan

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Journal article

2020, Solid-State Electronics, 168, p.107732

Publication

Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodology

Boudier, Dimitri

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Cretu, Bogdan

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Carin, Regis

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Journal article

2017, Solid-State Electronics, (128) 1, p.102-108

Publication

Low-frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs

Boudier, Dimitri

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Cretu, Bogdan

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Proceedings paper

2016, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - ULIS, 25/01/2016

Publication

On quantum effects and low frequency noise spectroscopy in Si gate-all-around nanowire MOSFETs at cryogenic temperatures

Boudier, Dimitri

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Cretu, Bogdan

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Proceedings paper

2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration of Silicon - ULIS, 3/04/2017, p.5-8

Publication

On trap identification in Gate-All-Around (GAA) Nanowire (NW) MOSFETs using Low Frequency Noise spectroscopy

Boudier, Dimitri

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Cretu, Bogdan

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Proceedings paper

2017, International Conference on Noise and 1/f Fluctuations - ICNF, 20/06/2017, p.1-4

Publication

Processing impact of the low-frequency noise of 1.8 V input-output bulk FinFETs

Claeys, Cor

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Proceedings paper

2019, 25th International Conference on 1/f Noise and Fluctuations, 18/06/2019, p.69-72

Publication

Si/SiGe superlattice I/O finFETs in a vertically-stacked gate-all-around horizontal nanowire technology

Hellings, Geert

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Mertens, Hans

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Subirats, Alexandre

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