Browsing by Author "Cardon, F."
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Publication A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
Journal article1997, Semiconductor Science and Technology, 12, p.907-912Publication A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
Publication A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments
Journal article1999, Semiconductor Science and Technology, (14) 9, p.871-877Publication A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers
Publication A BEEM study of PtSi Schottky contacts on ion-milled Si
Publication A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching
Journal article1997, Journal of Applied Physics, (82) 4, p.1696-1699Publication A study on (Co1-xNixSi2) Schottky contacts on N-Si(100) substrates
Proceedings paper2001, Semiconductor Technology - ISTC, p.540-548Publication An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices
Publication Controlling CoSi2 nucleation: the effect of entropy of mixing
Proceedings paper2001, Gate Stack and Silicide Issues in Silicon Processing, 24/04/2000, p.C7.9.1-C7.9.6Publication Controlling CoSi2 nucleation: the effect of entropy of mixing
Oral presentation2000, MRS Spring Meeting Symposium: Gate stack and silicide issues in silicon processing; 2000;Publication CoSi2 formation in the presence of interfacial silicon oxide
Journal article1999, Appl. Phys. Lett., (74) 20, p.2930-32Publication CoSi2 formation in the Ti/Co/SiO2/Si system
Journal article2000, J. Appl. Physics, (88) 1, p.133-140Publication CoSi2 nucleation in the presence of Ge
Journal article2001, Thin Solid Films, (384) 2, p.243-250Publication Electrical transport in (100)CoSi2/Si contacts
Journal article1995, J. Appl. Phys., (77) 6, p.2525-36Publication Epitaxial CoSi2 formation by a Cr or Mo interlayer
Proceedings paper2000, Gate Stack and Silicide Issues in Silicon Processing, p.C10.2Publication Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer
Journal article2001, Journal of Applied Physics, (89) 4, p.2146-2150Publication Influence of mixing entropy on the nucleation of CoSi2
Journal article2000, Physical Review B, (62) 18, p.12045-12051Publication Influence of Ti on CoSi2 nucleation
Journal article2000, Applied Physics Letters, (77) 20, p.3170-3172Publication Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy