Browsing by Author "Chai, Zheng"
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Publication Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Journal article2021, IEEE ELECTRON DEVICE LETTERS, (42) 10, p.1448-1451Publication Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors
; ;Chai, Zheng ;Zhang, W; ;Hatem, F ;Zhang, JF ;Freitas, PMarsland, JProceedings paper2019, VLSI Technology Symposium, 9/06/2019, p.T238-T239Publication Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement
Proceedings paper2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.564-567Publication Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching
Journal article2022, IEEE ELECTRON DEVICE LETTERS, (43) 7, p.1061-1064Publication Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
;Ma, Jigang ;Chai, Zheng ;Zhang, Wei Dong ;Zhang, J. F. ;Ji, Z. ;Benbakhti, BrahimJournal article2018, IEEE Transactions on Electron Devices, (65) 3, p.970-977Publication New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 2, p.812-818Publication Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals
Journal article2017, IEEE Transactions on Electron Devices, (64) 10, p.4099-4105Publication Random telegraph signal noise in advanced high performance and memory devices
;Claeys, Cor ;de Andrade, Gloria ;Chai, Zheng ;Fang, Wen; ; Zhang, WeiProceedings paper2016, 31st Symposium on Microelectronics Technology and Devices - SBMicro, 29/08/2016, p.1-6Publication RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.122-123Publication Stochastic computing based on volatile GeSe ovonic threshold switching selectors
Journal article2020, IEEE Electron Device Letters, (41) 10, p.1496-1499Publication TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Journal article2019, IEEE Transactions on Electron Devices, (66) 1, p.777-784Publication The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
Journal article2018, IEEE Electron Device Letters, (39) 7, p.955-958