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Browsing by Author "Chai, Zheng"

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    Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

    Chai, Zheng
    ;
    Zhang, Weidong
    ;
    Clima, Sergiu  
    ;
    Hatem, Firas
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    Degraeve, Robin  
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    Diao, Qihui
    Journal article
    2021, IEEE ELECTRON DEVICE LETTERS, (42) 10, p.1448-1451
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    Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors

    Degraeve, Robin  
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    Chai, Zheng
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    Zhang, W
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    Clima, Sergiu  
    ;
    Hatem, F
    ;
    Zhang, JF
    ;
    Freitas, P
    ;
    Marsland, J
    Proceedings paper
    2019, VLSI Technology Symposium, 9/06/2019, p.T238-T239
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    Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

    Ma, Jigang
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    Chai, Zheng
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    Zhang, Weidong
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    Govoreanu, Bogdan  
    ;
    Zhang, Jiang F.
    ;
    Ji, Z.
    ;
    Benbakhti, B.
    Proceedings paper
    2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.564-567
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    Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

    Zhou, Xue
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    Hu, Zeyu
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    Chai, Zheng
    ;
    Zhang, Weidong
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    Clima, Sergiu  
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    Degraeve, Robin  
    ;
    Zhang, Jian Fu
    Journal article
    2022, IEEE ELECTRON DEVICE LETTERS, (43) 7, p.1061-1064
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    Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

    Ma, Jigang
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    Chai, Zheng
    ;
    Zhang, Wei Dong
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    Zhang, J. F.
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    Ji, Z.
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    Benbakhti, Brahim
    ;
    Govoreanu, Bogdan  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 3, p.970-977
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    New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

    Hu, Zeyu
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    Zhang, Weidong
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    Degraeve, Robin  
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    Garbin, Daniele  
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    Chai, Zheng
    ;
    Saxena, Nishant
    Journal article
    2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 2, p.812-818
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    Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

    Chai, Zheng
    ;
    Ma, Jigang
    ;
    Zhang, Weidong
    ;
    Govoreanu, Bogdan  
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    Ji, Zhigang
    ;
    Zhang, Jian Fu
    Journal article
    2017, IEEE Transactions on Electron Devices, (64) 10, p.4099-4105
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    Random telegraph signal noise in advanced high performance and memory devices

    Claeys, Cor
    ;
    de Andrade, Gloria
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    Chai, Zheng
    ;
    Fang, Wen
    ;
    Govoreanu, Bogdan  
    ;
    Kaczer, Ben  
    ;
    Zhang, Wei
    Proceedings paper
    2016, 31st Symposium on Microelectronics Technology and Devices - SBMicro, 29/08/2016, p.1-6
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    RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism

    Chai, Zheng
    ;
    Ma, Jigang
    ;
    Zhang, Weidong
    ;
    Govoreanu, Bogdan  
    ;
    Simoen, Eddy  
    ;
    Zhang, Jiang
    Proceedings paper
    2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.122-123
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    Stochastic computing based on volatile GeSe ovonic threshold switching selectors

    Chai, Zheng
    ;
    Freitas, Pedro  
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    Zhang, Weidong
    ;
    Hatem, Firas
    ;
    Degraeve, Robin  
    ;
    Clima, Sergiu  
    Journal article
    2020, IEEE Electron Device Letters, (41) 10, p.1496-1499
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    TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

    Ma, Jigang
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    Chai, Zheng
    ;
    Zhang, Wei Dong
    ;
    Zhang, Jian Fu
    ;
    Marsland, John
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    Govoreanu, Bogdan  
    Journal article
    2019, IEEE Transactions on Electron Devices, (66) 1, p.777-784
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    The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

    Chai, Zheng
    ;
    Zhang, Weidong
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    Freitas, Pedro  
    ;
    Hatem, Firas
    ;
    Zhang, Jian Fu
    ;
    Marsland, John
    Journal article
    2018, IEEE Electron Device Letters, (39) 7, p.955-958

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