Browsing by Author "Chen, Michael"

Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics

Doped Gd-O based RRAM for embedded application

Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack

Engineering of a TiN\Al2O3(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Impact of tungsten oxidation conditions on the performance of Al2O3/WOx-based CBRAM devices

Intrinsic program instability in HfO2 RRAM and consequences on program algorithms

Low-current operation of novel Gd2O3-based RRAM cells with large memory window

Low-current operation of novel TiN\Gd-Al-O\Hf RRAM cells with large memory window

Novel flexible and cost-effective retention assessment method for TMO-based RRAM

Oxygen chemical potential optimization for low current (<10μA) resistive switching in oxide-based RRAM

Programming-conditions solutions towards suppression of retention tails of scaled oxide-based RRAM

Quantitative model for post-program instabilities in filamentary RRAM

Quantitative retention model for filamentary oxide-based resistive RAM

Quantitive endurance failure model for filamentary RRAM

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled hour-glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device

RRAM overview

Stack optimization of oxide-based RRAM for fast write speed (<1 $ls) at low operating current (<10 $lA)

Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention