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Browsing by Author "Chen, Shih-Hung"

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    A 0.7-1.15GHz complementary common-gate LNA in 0.18μm SOl CMOS with +15dBm IIP3 and >1kV HBM ESD protection

    van Liempd, Barend  
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    Ariumi, Saneaki
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    Martens, Ewout  
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    Chen, Shih-Hung  
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    Wambacq, Piet  
    Proceedings paper
    2015, 41st European Solid-State Circuits Conference - ESSCIRC, 14/09/2015, p.164-167
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    A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology

    Chen, Wen-Chieh  
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    Chen, Shih-Hung  
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    Huang, Man-Ching  
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    Chang, Shu-Wei
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    Hellings, Geert  
    Journal article
    2025, IEEE JOURNAL OF SOLID-STATE CIRCUITS, (60) 2, p.615-625
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    A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication

    Liu, Yao  
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    Tang, Xinyan  
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    Mangraviti, Giovanni  
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    Khalaf, Khaled  
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    Zhang, Yang  
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    Wu, Wei-Min  
    Proceedings paper
    2020, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), AUG 04-06, 2020, p.347-350
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    Active-lite interposer for 2.5 & 3D integration

    Hellings, Geert  
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    Scholz, Mirko
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    Detalle, Mikael  
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    Velenis, Dimitrios  
    Proceedings paper
    2015, IEEE Symposium on VLSI Technology, 16/06/2015, p.T222-T223
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    Advanced CMOS Technology Challenges for Robust ESD Design

    Chen, Shih-Hung  
    Meeting abstract
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022, p.TuT10
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    An insight into the effects induced by heavy-ion strikes in

    Griffoni, Alessio
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    Thijs, Steven  
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    Chen, Shih-Hung  
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    Tazzoli, Augusto
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    Cordoni, Martina
    Oral presentation
    2011, 5th Annual International Electrostatic Discharge Workshop - IEW
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    Bidirectional NPN ESD protection in silicon photonics technology

    Boschke, Roman
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    Chen, Shih-Hung  
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    Hellings, Geert  
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    Scholz, Mirko
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    De Heyn, Vincent  
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    Verheyen, Peter  
    Meeting abstract
    2016, International Reliability Physics Symposium - IRPS, 17/04/2016, p.1-7
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    Calibration and modeling of LICCDM setups

    Simicic, Marko  
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    Wu, Wei-Min  
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    Tamura, Shinichi
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    Shimada, Yohei
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    Sawada, Masanori
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    Chen, Shih-Hung  
    Meeting abstract
    2021, International Electrostatic Discharge Workshop - IEW, 15/05/2021
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    CDM ESD testing of a 3D TSV stacked IC chip

    Nagata, Nagata
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    Takaya, Satoshi
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    Ikeda, Hiroaki
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    Linten, Dimitri  
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    Scholz, Mirko
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    Chen, Shih-Hung  
    Meeting abstract
    2014-10, 5th IEEE International 3D-TEST Workshop, 23/10/2014, p.1-4
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    CDM protection of a 3D TSV memory IC with a 100 GB/s Wide I/O data bus

    Nagata, Makoto
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    Takaya, Satoshi
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    Ikeda, Hiroaki
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    Linten, Dimitri  
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    Scholz, Mirko
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    Chen, Shih-Hung  
    Proceedings paper
    2014-09, EOS/ESD Symposium Proceedings, 7/09/2014, p.61-67
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    CDM-time domain turn-on transient of ESD diodes in bulk FinFET and GAA NW technologies

    Chen, Shih-Hung  
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    Linten, Dimitri  
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    Hellings, Geert  
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    Simicic, Marko  
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    Kaczer, Ben  
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    Chiarella, Thomas  
    Meeting abstract
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-7
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    Challenges and solutions for ESD protection in advanced logic and RF CMOS technologies

    Linten, Dimitri  
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    Thijs, Steven  
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    Raczkowski, Kuba
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    Griffoni, Alessio
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    Chen, Shih-Hung  
    Proceedings paper
    2011, Taiwan ESD and Reilability Conference, 1/11/2011
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    Challenges for ESD solutions in germanium-based technologies

    Boschke, Roman
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    Hellings, Geert  
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    Chen, Shih-Hung  
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    Scholz, Mirko
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    Linten, Dimitri  
    Meeting abstract
    2016, International ESD Workshop - IEW, 16/05/2016, p.C4
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    Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup

    Hellings, Geert  
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    Mertens, Hans  
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    Karp, James
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    Maillard, Pierre
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    Subirats, Alexandre
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    Simoen, Eddy  
    Proceedings paper
    2018, Taiwan ESD and Reliability Conference, 7/09/2018
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    Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

    Griffoni, Alessio
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    Chen, Shih-Hung  
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    Thijs, Steven  
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    Linten, Dimitri  
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    Scholz, Mirko
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.812-815
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    Comparison of system-level ESD design methodologies – towards the efficient and ESD robust design of systems

    Scholz, Mirko
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    Chen, Shih-Hung  
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    Vandersteen, Gerd  
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    Linten, Dimitri  
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    Hellings, Geert  
    Journal article
    2013, IEEE Transactions on Device and Materials Reliability, (13) 1, p.213-222
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    Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

    Sandupatla, Abhinay  
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    Wu, Wei-Min  
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    Shih, Chun-An  
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    Chen, Shih-Hung  
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    Sibaja-Hernandez, Arturo  
    Proceedings paper
    2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022
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    Concise analytical expression for Wunsch-Bell 1-D pulsed heating and applications in ESD using TLP

    Hellings, Geert  
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    Roussel, Philippe  
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    Wang, Nian
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    Boschke, Roman
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    Chen, Shih-Hung  
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    Simicic, Marko  
    Proceedings paper
    2019, 2019 International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-2
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    Defect characterization after ESD stress: merging TLP and Pulsed-IV techniques

    Linten, Dimitri  
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    Ji, Zhigang
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    Boschke, Roman
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    Hellings, Geert  
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    Chen, Shih-Hung  
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    Scholz, Mirko
    Meeting abstract
    2015, 9th International Electrostatic Discharge Workshop - IEW, 4/05/2015
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    Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology

    Tang, Xinyan  
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    Liu, Yao  
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    Mangraviti, Giovanni  
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    Zong, Zhiwei  
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    Khalaf, Khaled  
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    Zhang, Yang  
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    Wu, Wei-Min  
    Journal article
    2021, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (69) 6, p.2841-2853
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