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Browsing by Author "Cheng, Kai"

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    2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer

    Srivastava, Puneet
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    Cheng, Kai
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    Das, Jo
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    Van Hove, Marleen
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    Leys, Maarten
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    Marcon, Denis  
    Proceedings paper
    2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012
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    A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si

    Das, Jo
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    Everts, Jordi
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    Van den Keybus, Jeroen
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    Van Hove, Marleen
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    Visalli, Domenica
    Journal article
    2011, IEEE Electron Device Letters, (32) 10, p.1370-1372
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    A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

    Marcon, Denis  
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    Kauerauf, Thomas
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    Medjdoub, Farid
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    Das, Jo
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    Van Hove, Marleen
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    Srivastava, Puneet
    Proceedings paper
    2010-12, IEEE International Electron Device Meeting - IEDM, 6/12/2010, p.472-472
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    AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range

    Malinowski, Pawel  
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    John, Joachim  
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    Lorenz, Anne
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    Aparicio Alonso, Patricia
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    Germain, Marianne
    Proceedings paper
    2008, Optical Sensors 2008, 7/04/2008, p.70030N
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    AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE

    Cheng, Kai
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    Leys, Maarten
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    Derluyn, Joff
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    Balachander, Krishnan
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    Degroote, Stefan
    Proceedings paper
    2007, 7th International Conference on Nitride Semiconductors - ICNS-7, 16/09/2007
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    AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

    Cheng, Kai
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    Leys, Maarten
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    Derluyn, Joff
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    Balachander, Krishnan
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    Degroote, Stefan
    Journal article
    2008, Physica Status Solidi C, (5) 6, p.1600-1602
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    AlGaN/GaN HEMT : when MOVPE meets the device challenge

    Germain, Marianne
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    Leys, Maarten
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    Boeykens, Steven
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    Cheng, Kai
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    Degroote, Stefan
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    Derluyn, Joff
    Proceedings paper
    2005, Extended Abstracts 11th European Workshop on MOVPE, 5/06/2005, p.367-372
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    AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates

    Cheng, Kai
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    Leys, Maarten
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    Degroote, Stefan
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    Derluyn, Joff
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    Sijmus, Bram
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    Favia, Paola  
    Proceedings paper
    2007, 12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII, 3/06/2007
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    AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

    Cheng, Kai
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    Leys, Maarten
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    Derluyn, Joff
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    Degroote, Stefan
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    Xiao, Dongping
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    Lorenz, Anne
    Journal article
    2007-01, Journal of Crystal Growth, 298, p.822-825
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    AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity

    Cheng, Kai
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    Leys, Maarten
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    Degroote, Stefan
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    Derluyn, Joff
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    Sijmus, Bram
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    Favia, Paola  
    Journal article
    2008, Japanese Journal of Applied Physics, (47) 3, p.1553-1555
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    AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications

    Srivastava, Puneet
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    Das, Jo
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    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
    Meeting abstract
    2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010
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    AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility

    Cheng, Kai
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    Liang, Hu  
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    Van Hove, Marleen
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    Geens, Karen  
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    De Jaeger, Brice  
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    Srivastava, Puneet
    Journal article
    2012, Applied Physics Express, (5) 1, p.011002-1
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    AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance

    Visalli, Domenica
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    Derluyn, Joff
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    Degroote, Stefan
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    Leys, Maarten
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    Cheng, Kai
    ;
    Germain, Marianne
    Proceedings paper
    2008, 40th International Conference on Solid State Devices and Materials - SSDM, 23/09/2008
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    AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
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    Degroote, Stefan
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    Leys, Maarten
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    Cheng, Kai
    Journal article
    2009, Japanese Journal of Applied Physics, (48) 4, p.04C101
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    AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

    Cheng, Kai
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    Degroote, Stefan
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    Leys, Maarten
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    Medjdoub, Farid
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    Derluyn, Joff
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    Sijmus, Bram
    Journal article
    2011, Journal of Crystal Growth, (315) 1, p.204-207
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    ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT

    Germain, Marianne
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    Leys, Maarten
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    Degroote, Stefan
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    Cheng, Kai
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    Boeykens, Steven
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    Derluyn, Joff
    Oral presentation
    2005, ESA-CTB Round Table on Wide Bandgap Technologies for Microwave Application
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    Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection

    Malinowski, Pawel  
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    John, Joachim  
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    Duboz, Jean-Yves
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    Hellings, Geert  
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    Lorenz, Anne
    Journal article
    2009-12, IEEE Electron Device Letters, (30) 12, p.1308-1310
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    Breakdown voltage mechanisms in AlGaN switching diodes

    Lorenz, Anne
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    John, Joachim  
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    Derluyn, Joff
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    Cheng, Kai
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    Germain, Marianne
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    Borghs, Gustaaf  
    Proceedings paper
    2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.53-55
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    Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement

    Cheng, Kai
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    Leys, Maarten
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    Dekoster, Johan  
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    Degroote, Stefan
    Oral presentation
    2010, International Workshop on Nitride Semiconductors - IWN
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    Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer

    Kudrawiec, Robert
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    Paszkiewicz, B.
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    Motyka, M.
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    Misciewic, Jan
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    Derluyn, Joff
    ;
    Lorenz, Anne
    Journal article
    2008-11, Journal of Applied Physics, (104) 9, p.96108
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