Browsing by Author "De Jaeger, Brice"
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Publication 200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements
Publication 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
; ; ; ; ; Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
Journal article2023, SOLID-STATE ELECTRONICS, (210) December, p.Art. 108778Publication A low thermal budget pre metal dielectric stack using PECVD and HDP processing
Oral presentation2001, 7th International Dielectrics & Conductors for ULSI Multilevel Interconnection Conference (DCMIC) and ExhibitionPublication A step towards a better understanding of silicon passivated (100) Ge p-channel
; ; ; ; Proceedings paper2007, Advanced Gate Stack , Source/Drain and Channel Engineering for Si-Based CMOS 3, 6/05/2007, p.53-63Publication Advanced transistors for high frequency applications
Proceedings paper2020, 237th ECS Spring Meeting - Advanced CMOS-compatible Semiconductor Devices 19, 10/05/2020, p.27-38Publication AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Journal article2012, Applied Physics Express, (5) 1, p.011002-1Publication An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Proceedings paper2018, 30th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 13/05/2018, p.284-287Publication Analysis of junction leakage in advanced germanium p+/n junctions
Proceedings paper2007, ESSDERC Proceedings, 11/09/2007, p.454-457Publication Analysis of the temperature dependence of trap-assisted tunneling in Ge pFET junctions
; ; ; Claeys, CorJournal article2011, Journal of the Electrochemical Society, (158) 10, p.H955-H960Publication Analysis of the temperature dependence of trap-assisted-tunneling in Ge pFETs junctions
; ; ; Claeys, CorProceedings paper2011, China Semiconductor Technology International Conference - CSTIC, 13/03/2011, p.725-730Publication Applicability of charge pumping on Germanium MOSFETs
Journal article2008, IEEE Electron Device Letters, (29) 12, p.1364-1366Publication Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Oral presentation2007, 7th International Conference Atomic Layer Deposition Conference - ALDPublication Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
Journal article2013, IEEE Electron Device Letters, (34) 8, p.1035-1037Publication Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
Proceedings paper2012, 24th International Symposium on Power Semiconductor Devices & IC's - ISPSD, 3/06/2012, p.49-52Publication Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm substrates
Proceedings paper2013-09, Solid State Devices and Materials Conference - SSDM, 24/09/2013, p.914-915Publication Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
Journal article2014, Japanese Journal of Applied Physics, 53, p.04EF01Publication Challenges and opportunities in advanced Ge pMOSFETs
; ; ; ; ; Journal article2012, Materials Science in Semiconductor Processing, (15) 6, p.588-600Publication Channel backscattering characteristics of high performance germanium pMOSFETs
Proceedings paper2008, 9th International Conference on ULtimate Integration on Silicon - ULIS, 12/03/2008, p.7-10Publication Characterization of voltage and frequency dependent parasitics observed in Si passivated germanium metal gate pMOSFETs
Meeting abstract2008, 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 18/05/2008