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Browsing by Author "Duan, Meng"

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    An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

    Ji, Zhigang
    ;
    Zhang, Xiong
    ;
    Franco, Jacopo  
    ;
    Gao, Rui
    ;
    Duan, Meng
    ;
    Zhang, Jian Fu
    ;
    Zhang, Wei Dong
    Journal article
    2015, IEEE Transactions on Electron Devices, (62) 11, p.3633-3639
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    Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

    Duan, Meng
    ;
    Zhang, Jian Fu
    ;
    Ji, Zhigang
    ;
    Zhang, Wei Dong
    ;
    Vigar, David
    ;
    Asen, Asenov
    ;
    Gerrer, Louis
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 9, p.3642-3648
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    Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

    Duan, Meng
    ;
    Zhang, Jian Fu
    ;
    Ji, Zhigang
    ;
    Zhang, Wei Dong
    ;
    Kaczer, Ben  
    ;
    Asenov, Asen
    Journal article
    2017, IEEE Transactions on Electron Devices, (64) 6, p.2478-2484
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    New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation

    Duan, Meng
    ;
    Zhang, Jian F.
    ;
    Li, Zhigang
    ;
    Zhang, Wei Dong
    ;
    Kaczer, Ben  
    ;
    Schram, Tom  
    Journal article
    2013, IEEE Transactions on Electron Devices, (60) 8, p.2505-2511
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    Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

    Gao, Rui
    ;
    Manut, Azrif B.
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    Ji, Zhigang
    ;
    Ma, Jigang
    ;
    Duan, Meng
    ;
    Zhang, Jian Fu
    ;
    Franco, Jacopo  
    Journal article
    2017, IEEE Transactions on Electron Devices, (64) 4, p.1467-1473

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