Browsing by Author "Duan, Meng"
Now showing 1 - 5 of 5
- Results Per Page
- Sort Options
Publication An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
Journal article2015, IEEE Transactions on Electron Devices, (62) 11, p.3633-3639Publication Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging
;Duan, Meng ;Zhang, Jian Fu ;Ji, Zhigang ;Zhang, Wei Dong ;Vigar, David ;Asen, AsenovGerrer, LouisJournal article2016, IEEE Transactions on Electron Devices, (63) 9, p.3642-3648Publication Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Journal article2017, IEEE Transactions on Electron Devices, (64) 6, p.2478-2484Publication New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
Journal article2013, IEEE Transactions on Electron Devices, (60) 8, p.2505-2511Publication Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
Journal article2017, IEEE Transactions on Electron Devices, (64) 4, p.1467-1473