Browsing by Author "El Kazzi, Salim"

2D materials integration: The long journey from a lab-to-fab

2D materials: roadmap to CMOS integration

Band-to-band tunneling MOSCAPs for rapid TFET characterization

Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts

Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates

Demonstration of direction dependent conduction through MoS2 films prepared by tunable mass transport fabrication

Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)

Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n+InAs/p+GaSb NW tunneling devices

Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy

Extracting the effective bandgap of heterojunctions using Esaki diode I-V meaurements

Forcing epitaxial relationships between GS-MBE MX2 grown layers and commercial substrates

Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2

High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Importance of the substrate' s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

In-depth characterization of WSe2 monolayers grown by GSMBE

InAs/GaSb interface investigation by high resolution HAADF-STEM