Browsing by Author "Fanciulli, Marco"
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Publication Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface
Journal article2011, Microelectronic Engineering, (88) 4, p.435-439Publication Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
Journal article2009-06, IEEE Electron Device Letters, (30) 6, p.620-622Publication Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates
Journal article2011, Microelectronic Engineering, (88) 4, p.431-434Publication Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates
Journal article2014, 2D Materials, (1) 1, p.11010Publication Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition
Publication In situ interface and surface characterization of Ge passivated III-V substrates for high-k oxide deposition
Proceedings paper2008, E-MRS Spring Meeting Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS, 26/05/2008Publication Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks
Journal article2010, Thin Solid Films, (518) 6, Suppl. 1, p.S123-S127Publication Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates
Proceedings paper2009, High-k Dielectrics on Semiconductors with High Carrier Mobility, 30/11/2009, p.1194-A08-10Publication Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning
Oral presentation2009, MRS Spring Meeting Symposium C: CMOS Gate-Stack ScalingPublication Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
Journal article2011, Applied Physics Letters, (99) 19, p.193505Publication Resistive electrical switching of CuTCNQ based memory with a dedicated switching layer
Meeting abstract2009, MRS Spring Meeting Symposium H: Materials and Physics for Nonvolatile Memories, 13/04/2009, p.H7.4Publication Structure and interface bonding of GeO2/Ge/ In0.15Ga0.85As heterostructures
Journal article2008, Applied Physics Letters, (93) 13, p.133504Publication Theoretical aspects of graphene-like group IV semiconductors
Journal article2014, Applied Surface Science, 291, p.98-103Publication Vibrational properties of epitaxial silicene layers on (1 1 1) Ag
Journal article2014, Applied Surface Science, 291, p.113-117