Browsing by Author "Florent, Karine"
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Publication Evaluation of alternative vertical transistors for 3D NAND applications
Florent, KarinePHD thesis2019-06Publication Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges
Journal article2020, Nanomaterials, (10) 8, p.1576Publication First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
Proceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.158-159Publication First-principles perspective on poling mechanisms and ferroelectric/ antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications
Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.380-383Publication From planar to vertical capacitors : a first step towards ferroelectric V-FeFET integration
Proceedings paper2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.164-167Publication Impact of top and bottom conductive lyers on electrical and material properties of ferroelectric aluminum doped HfO2
Meeting abstract2016, 47th IEEE Semiconductor Interface Specialists Conference, 8/12/2016Publication Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
Proceedings paper2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.6D.3-1-6D.3-7Publication New insights into the imprint effect in FE-HfO and its recovery
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-7Publication Reliability study of ferroelectric Al:HfO2 thin films for DRAM and NAND applications
Journal article2017, IEEE Transactions on Electron Devices, (64) 10, p.4091-4098Publication The flexoelectric effect in Al-doped hafnium oxide
Journal article2018, Nanoscale, (10) 18, p.8471-8476Publication Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
Journal article2017, Journal of Applied Physics, (121) 20, p.204103Publication Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory
Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.43-46