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Browsing by Author "Fonseca, Carlos"

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    Advances and challenges in dual-tone development process optimization

    Fonseca, Carlos
    ;
    Somervell, Mark
    ;
    Scheer, Steven  
    ;
    Printz, Wallace
    ;
    Nafus, Kathleen  
    Proceedings paper
    2009, Optical Microlithography XXII, 22/02/2009, p.72740I
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    Advances in dual-tone development for pitch frequency doubling

    Fonseca, Carlos
    ;
    Somervell, Mark
    ;
    Scheer, Steven  
    ;
    Kuwahara, Yuhei
    ;
    Nafus, Kathleen  
    Proceedings paper
    2010, Optical Microlithography XXIII, 21/02/2010, p.76400E
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    Advances in process optimization for dual-tone development as a double patterning technique

    Fonseca, Carlos
    ;
    Somervell, Mark
    ;
    Bernard, Sophie
    ;
    Hatakeyama, Shinichi
    ;
    Nafus, Kathleen  
    Proceedings paper
    2008, 5th International Symposium on Immersion Lithography Extensions, 22/09/2008
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    EUV resist requirements: absorbance and acid yield

    Gronheid, Roel  
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    Fonseca, Carlos
    ;
    Leeson, Michael
    ;
    Adams, Jacob
    ;
    Strahan, Jeff
    ;
    Willson, C. Grant
    Proceedings paper
    2009, Advances in Resist Materials and Processing Technology XXVI, 22/02/2009, p.727332
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    EUV secondary electron blur at the 22nm half pitch node

    Gronheid, Roel  
    ;
    Younkin, Todd
    ;
    Leeson, Michael
    ;
    Fonseca, Carlos
    ;
    Hooge, Joshua
    ;
    Nafus, Kathleen  
    Proceedings paper
    2011, Extreme Ultravioet (EUV) Lithography II, 27/02/2011, p.796904
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    Exploration of new resist chemistries and process methods for enabling dual-tone development

    Fonseca, Carlos
    ;
    Somervell, M.
    ;
    Scheer, S.
    ;
    Kuwahara, Y.
    ;
    Nafus, Kathleen  
    ;
    Gronheid, Roel  
    Proceedings paper
    2009, 6th International Symposium on Immersion Lithography Extensions, 22/10/2009
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    Extraction and identification of resist modeling parameters for EUV lithography

    Fonseca, Carlos
    ;
    Gronheid, Roel  
    ;
    Scheer, Steven  
    Proceedings paper
    2008, Advances in Resist Materials and Processing Technology XXV, 24/02/2008, p.69230S
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    Extreme-ultraviolet secondary electron blur at the 22-nm half pitch node

    Gronheid, Roel  
    ;
    Younkin, Todd
    ;
    Leeson, Michael J.
    ;
    Fonseca, Carlos
    ;
    Hooge, Joshua S.
    Journal article
    2011, Journal of Micro/Nanolithography MEMS and MOEMS, (10) 3, p.33004
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    Feasibility study on dual tone development for frequency doubling

    Bernard, Sophie
    ;
    Fonseca, Carlos
    ;
    Gronheid, Roel  
    ;
    Hatakeyama, Shinichi
    ;
    Leeson, Michael
    Proceedings paper
    2008, 5th International Symposium on Immersion Lithography Extensions, 22/09/2008
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    Understanding EUV resist dissolution characteristics and its impact to RLS limitations

    Fonseca, Carlos
    ;
    Head, Brian H.
    ;
    Shite, Hideo
    ;
    Nafus, Kathleen  
    ;
    Gronheid, Roel  
    ;
    Winroth, Gustaf
    Proceedings paper
    2011, Extreme Ultraviolet (EUV) Lithography II, 27/02/2011, p.796911
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    Understanding RLS limitations for EUV pre-production stages ; impact of resist dissolution

    Fonseca, Carlos
    ;
    Shite, Hideo
    ;
    Head, Brian
    ;
    Nafus, Kathleen  
    ;
    Gronheid, Roel  
    ;
    Winroth, Gustaf
    Proceedings paper
    2010, International Symposium on Extreme Ultraviolet Lithography, 18/10/2010

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