Browsing by Author "Galloway, Kenneth F."

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Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs

Zhang, Cher Xuan
;
Zhang, E. Xia
;
Fleetwood, Dan M.
;
Schrimpf, Ronald D
;
Galloway, Kenneth F.
Proceedings paper
2010, 11th European Conference on Radiation and its Effects on Components and Systems - RADECS, 20/09/2010
Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs

Zhang, Cher Xuang
;
Francis, Sarah Ashley
;
Zhang, En Xia
;
Fleetwood, Daniel M.
;
Schrimpf, Ronald D.
Journal article
2011, IEEE Transactions on Nuclear Science, (58) 3, p.764-769
Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Arora, Rajan
;
Simoen, Eddy
;
Zhang, En Xia
;
Fleetwood, Daniel M.
;
Schrimpf, Ronald D.
Journal article
2010, IEEE Transactions on Nuclear Science, (57) 4, p.1933-1939
Effects of processing and radiation bias on leakage currents in Ge pMOSFETs

Zhang, Cher Xuan
;
Zhang, En Xia
;
Fleetwood, Daniel M.
;
Schrimpf, Ronald D.
;
Galloway, Kenneth F.
Journal article
2010, IEEE Transactions on Nuclear Science, (57) 6, p.3066-3070