Browsing by Author "Gencarelli, Federica"
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Publication Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Journal article2015, Thin Solid Films, 590, p.163-169Publication Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
Meeting abstract2015-09, E-MRS Fall Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and Appl., 14/09/2015Publication Application of atom probe tomography to epitaxial layers
Proceedings paper2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.79-80Publication Atomic insight of Ge(1-x)Sn(x) using atom probe tomography
Proceedings paper2012, 53rd International Field Emission Symposium - IFES, 21/05/2012Publication Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Journal article2014, Applied Physics Letters, (104) 20, p.202107Publication Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
Proceedings paper2013-06, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.65-66Publication Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Proceedings paper2011, ULSI Process Integration 7, 9/10/2011, p.239-248Publication Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7, 9/10/2011, p.2133Publication Challenges for introducing Ge and III/V devices into CMOS technologies
Proceedings paper2012, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.5D.1Publication Characterization of Al/Ti and NiGe ohmic contacts to n-type GeSn CVD-grown layers
Meeting abstract2012, Materials for Advanced Metallization - MAM, 11/03/2012, p.P4-05Publication Composition and thickness dependence of GeSn growth by chemical vapor deposition
Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.875-883Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Meeting abstract2012, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 7/10/2012, p.3213Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Journal article2013, ECS Journal of Solid State Science and Technology, (2) 4, p.P134-P137Publication Current transients in reverse-biased p-GeSn/n-Ge diodes
Proceedings paper2015, International Conference on Silicon Epitaxy and Heterostructures - ICSI-9, 17/05/2015, p.111-112Publication CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Proceedings paper2012, 6th International Silicon- Germanium Technology and Device Meeting - ISTDM, 4/06/2012Publication Deep-level transient spectroscopy of MOS capacitors on GeSn epitaxial layers
Meeting abstract2012, ECS Fall Meeting Symposium E6: High Purity Silicon 12, 7/10/2012, p.2649Publication Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Proceedings paper2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.63-64Publication Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Journal article2015, Solid-State Electronics, 110, p.65-70Publication Electrical characterization of pGeSn/nGe diodes
Proceedings paper2014-06, International Silicon Technology and Device Meeting - ISTDM, 2/06/2014, p.53-54