Browsing by Author "Heuken, Michael"
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Publication Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
; ; ; ; ; ; Marx, MatthiasProceedings paper2021, 2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), 24/05/2021Publication Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Meeting abstract2019, DGKK Workshop "Epitaxy of III-V Semiconductors", 5/12/2019Publication Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Meeting abstract2016, International Workshop on Nitride Semiconductors - IWN, 2/10/2016Publication Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Meeting abstract2016, DGKK-Workshop, 8/12/2016Publication Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT
Meeting abstract2017, 12th International Conference on Nitride Semiconductors - ICNS, 24/07/2017Publication Growth of III/V materials on large area silicon
Publication Integration of 650 V GaN power ICs on 200 mm engineered substrates
; ; ; ; ; Journal article2020, IEEE Transactions on Semiconductor Manufacturing, (33) 4, p.534-538Publication Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition
Publication Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
Journal article2020, Applied Surface Science, 515, p.146016Publication Vertical GaN devices: Process and reliability
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