Browsing by Author "Ho, M.Y."
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Publication A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Oral presentation2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOSPublication Initial growth kinetics of ALD Al2O3 and HfO2 and post-annealing effects
Publication Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Journal article2002, Journal of Applied Physics, (92) 12, p.7168-7172Publication Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISC