Browsing by Author "Hughes, Greg"
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Publication Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing
Journal article2005, Microelectronic Engineering, (77) 3_4, p.302-309Publication Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers
Journal article2005-08, Semiconductor Science and Technology, 20, p.668-672Publication On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
Journal article2018, Applied Surface Science, (427) A, p.260-266Publication Reliability of HfSiON gate dielectrics
Journal article2005, Semiconductor Science and Technology, 20, p.68-71Publication Reliability of thin ZrO2 gate dielectric layers
Journal article2011, Microelectronics Reliability, (51) 6, p.1118-1122Publication Temperature-accelerated breakdown in ultra-thin SiON dielectrics
Journal article2004, Semiconductor Science and Technology, (19) 4, p.1254-1258Publication Time dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETs
Publication Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETs
Proceedings paper2010, 48th Annual International Reliability Physics Symposium - IRPS, 3/05/2010, p.799-803