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Browsing by Author "Inoue, Osamu"

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    Enabling CD SEM metrology for 5nm technology node and beyond

    Lorusso, Gian  
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    Ohashi, Takeyoshi
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    Yamaguchi, Astuko
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    Inoue, Osamu
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    Sutani, Takumichi
    Proceedings paper
    2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.1014512
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    Hybrid overlay metrology for high order correction by using CDSEM

    Leray, Philippe  
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    Halder, Sandip  
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    Lorusso, Gian  
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    Baudemprez, Bart  
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    Inoue, Osamu
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    Okagawa, Yutaka
    Proceedings paper
    2016, Metrology, Inspection, and Process Control for Microlithography XXX, 20/02/2016, p.977824
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    Hybrid overlay metrology with CDSEM in a BEOL patterning scheme

    Leray, Philippe  
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    Jehoul, Christiane  
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    Inoue, Osamu
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    Okagawa, Yutaka
    Proceedings paper
    2015, Metrology, Inspection, and Process Control for Microlithography XXIX, 22/02/2015, p.942408
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    Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

    Lorusso, Gian  
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    Inoue, Osamu
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    Ohashi, Takeyoshi
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    Altamirano Sanchez, Efrain  
    Proceedings paper
    2016, Metrology, Inspection, and Process Control for Microlithography XXX, 21/02/2016, p.97780V
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    Precise measurement of thin film thickness in 3D-NAND device with CD-SEM

    Ohashi, Takeyoshi
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    Atsuko, Yamaguchi
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    Kobayashi, Takashi
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    Inoue, Osamu
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    Hasumi, Kazuhisa
    Oral presentation
    2016, 42nd Micro and Nano Engineering Conference
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    SEM based overlay measurement between resist and buried patterns

    Inoue, Osamu
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    Okagawa, Yutaka
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    Hasumi, Kazuhisa
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    Shao, Chuanyu
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    Leray, Philippe  
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    Halder, Sandip  
    Proceedings paper
    2016, Metrology, Inspection, and Process Control for Microlithography XXX, 21/02/2016, p.97781D
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    SEM based overlay measurement between via patterns and buried M1 patterns using high voltage SEM

    Hasumi, Kazuhisa
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    Inoue, Osamu
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    Okagawa, Yutaka
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    Shao, Chuanyu
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    Leray, Philippe  
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    Halder, Sandip  
    Proceedings paper
    2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.101451J
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    Variability study with CD-SEM metrology for STT-MRAM: Correlation analysis between physical dimensions and electrical property of the memory element

    Ohashi, Takeyoshi
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    Yamaguchi, Atusko
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    Hasumi, Kazuhisa
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    Inoue, Osamu
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    Ikata, Masami
    Meeting abstract
    2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 27/02/2017, p.101450H
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    Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element

    Ohashi, Takeyoshi
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    Yamaguchi, Atsuko
    ;
    Hasumi, Kazuhisa
    ;
    Inoue, Osamu
    ;
    Ikota, Masami
    Proceedings paper
    2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.101450H

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