Browsing by Author "Kang, Xuanwu"
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Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Publication AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Journal article2012, Applied Physics Express, (5) 1, p.011002-1Publication Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
Meeting abstract2012, Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 28/05/2012Publication Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
Proceedings paper2012, 24th International Symposium on Power Semiconductor Devices & IC's - ISPSD, 3/06/2012, p.49-52Publication Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
Journal article2012, IEEE Electron Device Letters, (33) 5, p.667-669Publication Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Proceedings paper2014, International Solid State Devices and Materials Conference - SSDM, 8/09/2014Publication Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
Journal article2015, Japanese Journal of Applied Physics, (54) 4S, p.04DF02Publication Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators
Proceedings paper2012, 18th International Workshop on Thermal Investigations of ICs and Systems - THERMINIC, 25/09/2012Publication Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Proceedings paper2016, IEEE International Reliability Physics Symposium - IRPS, 17/04/2016, p.CD-5Publication Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
; ; ; ; Proceedings paper2015, Gallium Nitride Materials and Devices X, 13/02/2015, p.936311Publication Fabrication and performance of Au-free AlGaN/GaN-on-Si power devices
Journal article2013, IEEE Transactions on Electron Devices, (60) 10, p.3071-3078Publication GaN-based HEMTs tested under high temperature storage test
Journal article2011, Microelectronics Reliability, (51) 9_11, p.1717-1720Publication GaN-on-Si for high-voltage applications
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E: GaN and SiC Power Technologies, 9/10/2011, p.2173Publication GaN-on-Si for high-voltage applications
Proceedings paper2011, Gallium Nitride and Silicon Carbide Power Technologies, 9/10/2011, p.101-112Publication GaN-on-Si HEMTs for 50 V RF applications
Meeting abstract2012, European Microwave Integrated Circuits Conference - EuMIC, 28/10/2012Publication Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
Meeting abstract2014, 17th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XVII, 13/07/2014, p.Mon-Oral-1-1Publication High sensitivity photoconductivity based measurement setup for the determination of effective recombination lifetime in silicon wafers
Journal article2009, Review of Scientific Instruments, (80) 5, p.53906Publication High temperature behaviour of GaN-on-Si high power MISHEMT devices
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 17/09/2012, p.302-305Publication High temperature calibration of a compact model for GaN-on-Si power switches
; ; ; ; Van Hove, MarleenProceedings paper2011, International Workshopon on Thermal Investigations of ICs and Systems - Therminic, 27/09/2011, p.159-163