Browsing by Author "Kaniava, Arvydas"
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Publication Characterisation of high-energy proton irradiation induced recombination centers in silicon
Proceedings paper1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.371-376Publication Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content
Journal article1994, Semiconductor Science and Technology, 9, p.1474-1479Publication Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Proceedings paper1994, 2nd European Conference on Radiation and its Effects on Components and Systems - RADECS, 13/09/1993, p.199-206Publication Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Journal article1994, IEEE Transactions on Nuclear Science, (41) 3, p.479-486Publication Hydrogenation of multicrystalline Si-materials for solar cells: discrimination between effects in the intra-grain and grain boundary regions
Proceedings paper1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.399-404Publication Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
Journal article1996, Journal of the Electrochemical Society, (143) 9, p.3014-3019Publication Impact of oxygen related extended defects on silicon diode characteristics
Journal article1995, J. Appl. Phys., (77) 11, p.5669-76Publication Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
Publication IR and MW absorption techniques for bulk and surface recombination control in high-quality silicon
Proceedings paper1995, Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation, 17/04/1995, p.389-394Publication On the electrical activity of oxygen-related extended defects in silicon
Proceedings paper1994, Proceedings of the 7th International Symposium on Silicon Materials Science and Technology - Semiconductor Silicon/1994, 22/05/1994, p.670-683Publication On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties
Journal article1994, IEEE Transactions on Nuclear Science, (41) 6, p.1924-1931Publication On the recombination activity of oxygen precipitation related lattice defects in silicon
Proceedings paper1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.35-40Publication PL study of oxygen related defects in silicon
Publication Proton irradiation effects in silicon devices
Proceedings paper1997, Recent Progress in Accelerator Beam Application. Proceedings 7th International Symposium on Advanced Nuclear Energy Research, 18/03/1996, p.224-229Publication Proton irradiation effects in silicon junction diodes and charge-coupled devices
Journal article1997, Radiation Physics and Chemistry, (50) 5, p.417-422Publication Recombination activity of iron related complexes in silicon
Publication Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements
Publication Recombination activity of iron-related complexes in silicon studied with microwave and light-induced absorption techniques
Proceedings paper1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.197-200Publication The impact of Fe and Cu on the minority carrier lifetime of P and N-type silicon wafers
Proceedings paper1995, ALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo, 28/09/1995, p.54-63Publication The response of Si p-n junction diodes to proton irradiation
Journal article1996, Semiconductor Science and Technology, (11) 10, p.1434-1442