Browsing by Author "Khazaka, Rami"
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Publication B and Ga Co-Doped Si1-xGex for p-Type Source/Drain Contacts
; ; ; ; ; Journal article2022, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, (11) 2, p.Art. 024008Publication Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Proceedings paper2020-09, ECS PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, 4/10/2020, p.37-42Publication Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Meeting abstract2020-07, ECS Prime Meeting, SiGe symposium, 4/10/2020, p.G03-1733Publication Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials
Meeting abstract2019, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.214-215Publication Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
Proceedings paper2019-10, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.7-10Publication Improving the electrical properties of epitaxial SiGe:B with excimer laser annealing treatments
Meeting abstract2019, 2019 E-MRS Fall Meeting, 16/09/2019Publication Investigation of low temperature SiP epitaxy on 300 mm Si substrates
Meeting abstract2020, ECS Prime 2020, 4/10/2020, p.G03-1734Publication Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Oral presentation2019, Nagoya University