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Browsing by Author "Lauwaert, Johan"

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    Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

    Simoen, Eddy  
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    Dhayalan, Sathish Kumar
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    Hikavyy, Andriy  
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    Loo, Roger  
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    Rosseel, Erik  
    Journal article
    2017, ECS Journal of Solid State Science and Technology, (6) 5, p.P284-P289
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    Deep level transient spectroscopy (DLTS) study of P3HT:PCBM organic solar cells

    Lauwaert, Johan
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    Khelifi, Samira
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    Decock, Koen
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    Burgelman, Marc
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    Voroshazi, Eszter  
    Oral presentation
    2011, MRS Fall Meeting Symposium H: Organic Photovotlaics Devices and Processing
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    Deep-level transient spectroscopic study of quenched-in defects in germanium

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
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    Callens, Freddy
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    Vanhellemont, Jan
    Oral presentation
    2014, EMRS Spring Meeting Symposium X: Materials Research for Group IV Semiconductors
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    Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn

    Gupta, Somya
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    Simoen, Eddy  
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    Loo, Roger  
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    Madia, Oreste  
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    Lin, Dennis  
    ;
    Merckling, Clement  
    Journal article
    2016-05, ACS Applied Materials & Interfaces, (8) 21, p.13181-13186
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    Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
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    Simoen, Eddy  
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    Vanhellemont, Jan
    Journal article
    2014, Semiconductor Science and Technology, (29) 12, p.125007
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    Electrical characterization of P3HT:PCM organic solar cells by temperature dependent admittance spectroscopy: defect investigation

    Khelifi, Samira
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    Decock, Koen
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    Lauwaert, Johan
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    Voroshazi, Eszter  
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    Aernouts, Tom  
    Oral presentation
    2011, E-MRS Spring Meeting Symposium S: Organic Photovoltaics: Science and Technology
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    Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

    Chen, Jiahe
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    Vanhellemont, Jan
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    Simoen, Eddy  
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    Lauwaert, Johan
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    Vrielinck, Henk
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    Rafi, Joan Marc
    Journal article
    2011, Physica Status Solidi C, (8) 3, p.674-677
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    Electronic properties of manganese in germanium

    Lauwaert, Johan
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    Segers, Siegfried
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    Moens, Filip
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    Opsomer, Karl  
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    Clauws, Paul
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    Callens, Freddy
    Journal article
    2015, Journal of Physics D: Applied Physics, (48) 17, p.175101
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    Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

    Alaei, Mojtaba  
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    Borga, Matteo  
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    Fabris, Elena  
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    Decoutere, Stefaan  
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    Lauwaert, Johan
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 10, p.5949-5955
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    Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

    Gupta, Somya
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    Simoen, Eddy  
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    Loo, Roger  
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    Smets, Quentin  
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    Verhulst, Anne  
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    Lauwaert, Johan
    Journal article
    2018, Applied Physics Letters, (113) 23, p.232101
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    Impact of Ge doping on Si substrate and diode characteristics

    Vanhellemont, Jan
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    Lauwaert, Johan
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    Chen, Jiiahe
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    Vrielinck, Henk
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    Rafi, Joan Marc
    Proceedings paper
    2010, Materials for End-of-Roadmap Scaling of CMOS Devices, 5/04/2010, p.1252-I05-13
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    Investigation of defects in P3HT:PCBM organic solar cells aged under constant illumination

    Khelifi, Samira
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    Spoltore, D.
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    Piersimoni, Fortuntato
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    Voroshazi, Eszter  
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    Decock, K
    Oral presentation
    2011, Photovoltaics at the Nanoscale
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    Investigation of recombination mechanisms in Cu(In,Ga)Se-2 solar cells using numerical modelling

    Yang, Sheng
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    Khelifi, Samira
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    de Wild, Jessica  
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    Vermang, Bart  
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    Lauwaert, Johan
    Journal article
    2021, SOLAR ENERGY, 228, p.464-473
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    Mn related defect levels in germanium

    Lauwaert, Johan
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    Moens, Filip
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    Segers, Siegfried
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    Opsomer, Karl  
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    Simoen, Eddy  
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    Vanhellemont, Jan
    Proceedings paper
    2014, 226th ECS Fall Meeting - High Purity and High Mobility Semiconductors Symposium, 5/10/2014, p.1658
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    Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

    Alaei, Mojtaba  
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    Borga, Matteo  
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    Fabris, Elena  
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    Decoutere, Stefaan  
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    Lauwaert, Johan
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 8, p.4563-4569
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    Multifaceted Characterization Methodology for Understanding Nonidealities in Perovskite Solar Cells: A Passivation Case Study

    Parion, Jonathan  
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    Ramesh, Santhosh  
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    Subramaniam, Sownder  
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    Vrielinck, Henk
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    Duerinckx, Filip  
    Journal article
    2024, SOLAR RRL, (8) 21, p.Art. 2400529
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    Numerical device modeling for direct Z-scheme junctions using a solar cell simulator

    Jacob, Nithin Thomas
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    Lauwaert, Jeroen
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    Vermang, Bart  
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    Lauwaert, Johan
    Journal article
    2023, SOLAR ENERGY, (259) July, p.320-327
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    Numerical modelling of the performance-limiting factors in CZGse solar cells

    Yang, Sheng  
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    Khelifi, Samira
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    Brammertz, Guy  
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    Choubrac, Leo
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    Barreau, Nicolas
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    Bolt, Pieter
    Journal article
    2020, Journal of Physics D: Applied Physics, (53) 38, p.385102
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    Porous multi-junction thin-film silicon solar cells for scalable solar water splitting

    Trompoukis, Christos
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    Abbasi, Amin
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    Schuttauf, Jan-Willem
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    Bosserez, Tom
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    Ronge, Jan
    Journal article
    2018-03, Solar Energy Materials and Solar Cells, 182, p.196-203
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    Profiling of border traps at GeSn and high-K oxide interface

    Gupta, Somya
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    Simoen, Eddy  
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    Dobri, Adam
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    Vrielinck, Henk
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    Lauwaert, Johan
    ;
    Merckling, Clement  
    Meeting abstract
    2014, ECS 2014 Fall Meeting, Symposium P3: High Purity and High Mobility Semiconductors 13, 5/10/2014, p.1647
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