Browsing by Author "Leys, Maarten"
- Results Per Page
- Sort Options
Publication 2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
;Das, Jo ;Everts, Jordi ;Van den Keybus, Jeroen ;Van Hove, MarleenVisalli, DomenicaJournal article2011, IEEE Electron Device Letters, (32) 10, p.1370-1372Publication A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Proceedings paper2010-12, IEEE International Electron Device Meeting - IEDM, 6/12/2010, p.472-472Publication A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors
Journal article2011, Journal of Physics D: Applied Physics, (44) 47, p.475104Publication AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Balachander, KrishnanDegroote, StefanProceedings paper2007, 7th International Conference on Nitride Semiconductors - ICNS-7, 16/09/2007Publication AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Balachander, KrishnanDegroote, StefanJournal article2008, Physica Status Solidi C, (5) 6, p.1600-1602Publication AlGaN/GaN HEMT : when MOVPE meets the device challenge
;Germain, Marianne ;Leys, Maarten ;Boeykens, Steven ;Cheng, Kai ;Degroote, StefanDerluyn, JoffProceedings paper2005, Extended Abstracts 11th European Workshop on MOVPE, 5/06/2005, p.367-372Publication AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Proceedings paper2007, 12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII, 3/06/2007Publication AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Degroote, Stefan ;Xiao, DongpingLorenz, AnneJournal article2007-01, Journal of Crystal Growth, 298, p.822-825Publication AlGaN/GaN HEMT: the growth challenge
Oral presentation2002, IEEE GaAs 2002 Conference: Workshop on Wide Bandgap SemiconductorsPublication AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Journal article2008, Japanese Journal of Applied Physics, (47) 3, p.1553-1555Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
;Srivastava, Puneet ;Das, Jo ;Visalli, Domenica ;Van Hove, MarleenDerluyn, JoffMeeting abstract2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010Publication AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Derluyn, Joff ;Degroote, Stefan ;Leys, Maarten ;Cheng, KaiGermain, MarianneProceedings paper2008, 40th International Conference on Solid State Devices and Materials - SSDM, 23/09/2008Publication AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Van Hove, Marleen ;Derluyn, Joff ;Degroote, Stefan ;Leys, MaartenCheng, KaiJournal article2009, Japanese Journal of Applied Physics, (48) 4, p.04C101Publication AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
;Cheng, Kai ;Degroote, Stefan ;Leys, Maarten ;Medjdoub, Farid ;Derluyn, JoffSijmus, BramJournal article2011, Journal of Crystal Growth, (315) 1, p.204-207Publication ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
;Germain, Marianne ;Leys, Maarten ;Degroote, Stefan ;Cheng, Kai ;Boeykens, StevenDerluyn, JoffOral presentation2005, ESA-CTB Round Table on Wide Bandgap Technologies for Microwave ApplicationPublication Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Journal article2009-12, IEEE Electron Device Letters, (30) 12, p.1308-1310Publication Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Proceedings paper2005, GaN, AlN, InN and Their Alloys, 28/11/2004, p.E8.20Publication Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Oral presentation2010, International Workshop on Nitride Semiconductors - IWNPublication Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
Journal article2003, Journal of Applied Physics, (94) 4, p.2752-2754