Browsing by Author "Lu, Augustin"

A 3D electrical characterization of single stacking faults in InP by conductive-AFM

Ab initio simulations of novel 2D materials and interfaces for advanced ICT applications

First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths

Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics

Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study

Interaction of silicene and germanene with non-metallic substrates

Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations

On the electrostatic control achieved in transistors based on multilayered MoS2: a first-principles study

Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

Oxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering

Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations

Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport

The role of nonidealities in the scaling of MoS2 FETs

Topological to trivial insulating phase transition in stanene

Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures: a first-principles study

Tunneling transistors based on MoS2/MoTe2 van der Waals heterostructures

Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures