Browsing by Author "Luysberg, Martina"
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Publication Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
;Morschbacher, Mario ;da Silva, Douglas ;Fichtner, Paulo ;Zawislak, FernandoHollaender, BerndOral presentation2004, MRS Spring meeting Symposium B: High-Mobility Group-IV Materials and DevicesPublication In-situ TEM on He implantation induced defects in SiGe/Si
;Luysberg, Martina ;Hueging, N. ;Urban, K. ;Buca, D. ;Holländer, B. ;Mantl, S.Morschbacher, M.Proceedings paper2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.377-378Publication Liquid injection MOCVD of dysprosium scandate films. Deposition characteristics and high-k applications
Journal article2007, Journal of the Electrochemical Society, (154) 7, p.G147-G154Publication Non-selective and selective thin SiGe strain-relaxed buffer layers: growth and carbon-induced relaxation
Proceedings paper2005, 4th International conference on Silicon Epitaxy and Heterostructures - ICSI-4, 23/05/2005Publication Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates
;Huging, Norbert ;Luysberg, Martina ;Urban, Knut ;Buca, Dan ;Hollander, BerndMantl, SiegfriedProceedings paper2005, Nanoelectronic Days 2005, 9/02/2005Publication Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
;Hueging, Norbert ;Luysberg, Martina ;Urban, Knut ;Buca, Dan ;Hollaender, BerndMantl, SiegfriedProceedings paper2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.97-102Publication Strained silicon on relaxed SiGe made by strain transfer
;Mantl, Siegfried ;Buca, Dan M. ;Holländer, Bernd ;Trinkaus, Helmut ;Luysberg, MartinaHouben, L.Meeting abstract2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.111-112Publication The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
;Luysberg, Martina ;Hueging, Norbert ;Lenk, Steffi ;Buca, DanHollaender, BerndOral presentation2004, MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and DevicesPublication The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices
;Mantl, S. ;Buca, Dan ;Hollander, Bernd ;Trinkaus, Helmut ;Hueging, NorbertLuysberg, MartinaProceedings paper2005, MRS Fall Meeting Symposium OO: Growth, Modification, and Analysis by Ion Beams at the Nanoscale, 28/11/2005Publication Thin SiGe strain-relaxed buffer layers: carbon-induced relaxation
Proceedings paper2005, ICSI-4, 4th International Conference on Silicon Epitaxy and Heterostructures, 23/05/2005Publication Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs
Oral presentation2005, Institute of Thin Films and Interfaces