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Browsing by Author "Luysberg, Martina"

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    Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures

    Morschbacher, Mario
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    da Silva, Douglas
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    Fichtner, Paulo
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    Zawislak, Fernando
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    Hollaender, Bernd
    Oral presentation
    2004, MRS Spring meeting Symposium B: High-Mobility Group-IV Materials and Devices
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    In-situ TEM on He implantation induced defects in SiGe/Si

    Luysberg, Martina
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    Hueging, N.
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    Urban, K.
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    Buca, D.
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    Holländer, B.
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    Mantl, S.
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    Morschbacher, M.
    Proceedings paper
    2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.377-378
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    Liquid injection MOCVD of dysprosium scandate films. Deposition characteristics and high-k applications

    Thomas, Reji
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    Ehrhart, Peter
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    Roeckerath, Martin
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    Van Elshocht, Sven  
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    Rije, Eduard
    Journal article
    2007, Journal of the Electrochemical Society, (154) 7, p.G147-G154
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    Non-selective and selective thin SiGe strain-relaxed buffer layers: growth and carbon-induced relaxation

    Caymax, Matty  
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    Delhougne, Romain  
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    Ries, Michael
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    Luysberg, Martina
    ;
    Loo, Roger  
    Proceedings paper
    2005, 4th International conference on Silicon Epitaxy and Heterostructures - ICSI-4, 23/05/2005
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    Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates

    Huging, Norbert
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    Luysberg, Martina
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    Urban, Knut
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    Buca, Dan
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    Hollander, Bernd
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    Mantl, Siegfried
    Proceedings paper
    2005, Nanoelectronic Days 2005, 9/02/2005
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    Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

    Hueging, Norbert
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    Luysberg, Martina
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    Urban, Knut
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    Buca, Dan
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    Hollaender, Bernd
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    Mantl, Siegfried
    Proceedings paper
    2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.97-102
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    Strained silicon on relaxed SiGe made by strain transfer

    Mantl, Siegfried
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    Buca, Dan M.
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    Holländer, Bernd
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    Trinkaus, Helmut
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    Luysberg, Martina
    ;
    Houben, L.
    Meeting abstract
    2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.111-112
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    The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures

    Luysberg, Martina
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    Hueging, Norbert
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    Lenk, Steffi
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    Buca, Dan
    ;
    Hollaender, Bernd
    Oral presentation
    2004, MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices
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    The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices

    Mantl, S.
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    Buca, Dan
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    Hollander, Bernd
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    Trinkaus, Helmut
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    Hueging, Norbert
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    Luysberg, Martina
    Proceedings paper
    2005, MRS Fall Meeting Symposium OO: Growth, Modification, and Analysis by Ion Beams at the Nanoscale, 28/11/2005
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    Thin SiGe strain-relaxed buffer layers: carbon-induced relaxation

    Caymax, Matty  
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    Delhougne, Romain  
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    Loo, Roger  
    ;
    Ries, Michael
    ;
    Luysberg, Martina
    Proceedings paper
    2005, ICSI-4, 4th International Conference on Silicon Epitaxy and Heterostructures, 23/05/2005
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    Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs

    Caymax, Matty  
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    Delhougne, Romain  
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    Loo, Roger  
    ;
    Eneman, Geert  
    ;
    Verheyen, Peter  
    ;
    Ries, Michael
    Oral presentation
    2005, Institute of Thin Films and Interfaces

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