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Browsing by Author "Martino, J. A."

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    50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection

    Santermans, Sybren  
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    Barge, David  
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    Hellings, Geert  
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    Bergfeld Mori, Carlos  
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    Migacz, Konrad Joseph  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    Comparison between analog performance of standard and strained triple-gate nFinFETs

    Pavanello, M. A.
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    Martino, J. A.
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    Simoen, Eddy  
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    Rooyackers, Rita
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    Collaert, Nadine  
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    Claeys, Cor
    Proceedings paper
    2008, EUROSOI Workshop Proceedings: 4th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits, 23/01/2008, p.131-132
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    Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications

    Silva, V. C. P.
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    Martino, J. A.
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    Simoen, Eddy  
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    Veloso, Anabela  
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    Agopian, P. G. D.
    Journal article
    2023, SOLID-STATE ELECTRONICS, (208) October, p.Art. 108729
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    Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C

    Agopian, P. G. D.
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    Carmo, G. J.
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    Martino, J. A.
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    Simoen, Eddy  
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    Peralagu, Uthayasankaran  
    Journal article
    2021, SOLID-STATE ELECTRONICS, 185, p.108091
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    Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters

    Bordallo, C. C. M
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    Sivieri, V. B
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    Martino, J. A.
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    Agopian, P. G. D
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    Rooyackers, Rita
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    Vandooren, Anne  
    Proceedings paper
    2015, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 26/01/2015, p.253-256

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