Browsing by Author "Martino, J. A."
Now showing 1 - 5 of 5
- Results Per Page
- Sort Options
Publication 50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication Comparison between analog performance of standard and strained triple-gate nFinFETs
Proceedings paper2008, EUROSOI Workshop Proceedings: 4th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits, 23/01/2008, p.131-132Publication Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications
Journal article2023, SOLID-STATE ELECTRONICS, (208) October, p.Art. 108729Publication Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Journal article2021, SOLID-STATE ELECTRONICS, 185, p.108091Publication Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters
;Bordallo, C. C. M ;Sivieri, V. B ;Martino, J. A. ;Agopian, P. G. D ;Rooyackers, RitaProceedings paper2015, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 26/01/2015, p.253-256