Browsing by Author "Menozzi, R."
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Publication Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs
;Cova, P. ;Menozzi, R. ;Lacey, D. ;Baeyens, YvesFantini, F.Proceedings paper1995, IEEE 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO; 27 Nov. 1995; Londo, p.98-103Publication Material and process related limitations of In P HEMT performance
Journal article1997, Materials Science and Engineering B, (44) 1_3, p.311-315Publication Modelling of low-frequency dispersive effects in GaAs and InP HEMTs
;Santarelli, A. ;Vannini, G. ;Borgarino, M. ;Menozzi, R. ;Baeyens, Yvesvan der Zanden, KoenProceedings paper1997, Proceedings 5th European Gallium Arsenide and Related III-V Compounds Applications Symposium; September 1997, p.131-134Publication On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
Journal article1999, IEEE Electron Device Letters, (20) 4, p.152-154Publication On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
;Menozzi, R. ;Borgarino, M. ;Baeyens, Yves ;Van Hove, MarleenFantini, F.Journal article1997, IEEE Microwave and Guided Wave Letters, (7) 1, p.3-5Publication Reliability testing of InP HEMT's using electrical stress methods
Journal article1999, IEEE Trans. Electron Devices, (46) 8, p.1570-1576Publication The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
;Menozzi, R. ;Borgarino, M. ;Cova, P. ;Baeyens, YvesFantini, F.Journal article1996, Microelectronics and Reliability, (36) 11_12, p.1899-1902Publication The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs
;Menozzi, R. ;Borgarino, M. ;Baeyens, Yves ;van der Zanden, Koen ;Van Hove, MarleenFantini, F.Proceedings paper1997, Indium Phosphide and Related Compounds Conference - IPRM, 11/05/1997, p.153-156