Browsing by Author "Nakamura, H."
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Publication 12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices
; ; ; ; Huynh Bao, TrongProceedings paper2019, 2019 Symposium on VLSI Technology, 9/06/2019, p.T15-1Publication DTCO and TCAD for a 12 layer-EUV ultra-scaled surrounding gate transistor 6T-SRAM
Proceedings paper2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 24/09/2018, p.45-48Publication Effects of electron and proton radiation on embedded SiGe source/drain diodes
Publication Effects of electron irradiation on SiGe devices
Publication Interconnects for scaled SRAM with vertical Surrounded Gate Transistors (SGT)
Proceedings paper2019, IEEE International Interconnect Technology Conference (IITC 2019) and Materials for Advanced Metallization Conference (MAM 2019), 3/06/2019, p.2.5Publication Radiation damage of Ge diodes and MOSFETs on Ge-on-Si substrates
Publication Radiation damage of Ge-on-Si devices