Browsing by Author "Nakazawa, Masashi"
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Publication Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Proceedings paper2014, IEEE International Reliability Physics Symposium - IRPS, 1/06/2014, p.PI.2Publication First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Meeting abstract2014, 226th Meeting of The Electrochemical Society, 5/10/2014, p.1646Publication First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Proceedings paper2014, High Purity and High Mobility Semiconductors 13, 5/10/2014, p.111-123Publication Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
Journal article2016, Applied Physics Letters, (109) 17, p.172101Publication The impact of energy barrier height on border traps in III-V gate stacks
Proceedings paper2015, Extended Abstracts of International Workshop on Dielectric Thin Films for Future Electron Devices - IWDTF, 2/11/2015, p.75-76