Browsing by Author "Nicholas, Gareth"
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Publication Analysis of junction leakage in advanced germanium p+/n junctions
Proceedings paper2007, ESSDERC Proceedings, 11/09/2007, p.454-457Publication Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Oral presentation2007, 7th International Conference Atomic Layer Deposition Conference - ALDPublication Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2067-2070Publication Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
Publication Germanium MOSFET devices: advances in materials understanding, process development, and electrical performance
Journal article2008, Journal of the Electrochemical Society, (155) 7, p.H552-H561Publication Germanium MOSFETs with CeO2/HfO2/TiN gate stacks
Journal article2007, IEEE Trans. Electron Devices, (54) 6, p.1425-1430Publication Germanium: the past and possibly a future material for microelectronics
Proceedings paper2007, Physics and Technology of High-K Dielectrics, 7/10/2007, p.479-483Publication High mobility strained Ge pMOSFETs with high-k/metal gate
; Journal article2007, IEEE Electron Device Letters, (28) 9, p.825-827Publication High performance high-k/metal gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant
Proceedings paper2007-09, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.462-465Publication High-performance deep submicron Ge pMOSFETs with halo implants
Journal article2007, IEEE Trans. Electron Devices, (54) 9, p.2503-2511Publication Junction formation in Ge by ion implantation
Proceedings paper2007-05, Proceedings International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling - INSIGHT, 6/05/2007, p.297-304Publication Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
Journal article2007, Applied Physics Letters, (91) 26, p.263512Publication Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack
Journal article2007, IEEE Electron Device Letters, (28) 4, p.288-291Publication Origin and suppression of junction leakage in germanium-on-silicon structures
Proceedings paper2007, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3: New Materials, Processes and Equipment, 6/05/2007, p.31-39Publication The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal
Proceedings paper2008, 9th International Conference on Ultimate Integration of Silicon - ULIS, 12/03/2008, p.19-22