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Browsing by Author "Nouri, F."

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    Further optimization of plasma nitridation of ultra-thin oxides for 65-nm node MOSFETS

    Kraus, P.A.
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    Chua, T.C.
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    Ahmed, K.Z.
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    Campbell, J.
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    Nouri, F.
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    Cruise, J.
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    Rothschild, Aude
    Journal article
    2004, Semiconductor Fabtech, 23, p.73-76
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    High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

    Wang, X.P.
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    Li, M.F.
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    Yu, HongYu
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    Yang, J.J.
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    Loh, W.Y.
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    Zhu, C.X.
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    Du, A.Y.
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    Trigg, A.D.
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    Zhang, G.
    Proceedings paper
    2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2006
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    Leakage current control in recessed SiGe source/drain junctions

    Claeys, Cor
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    Bargallo Gonzalez, Mireia
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    Eneman, Geert  
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    Verheyen, Peter  
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    Bender, Hugo  
    Journal article
    2007, Journal of the Electrochemical Society, (154) 9, p.H814-H821
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    Study of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approach

    Noda, T.
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    Vandervorst, Wilfried  
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    Felch, S.
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    Parihar, V.
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    Vrancken, Christa  
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    Severi, Simone  
    Proceedings paper
    2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.712-713
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    Study of Ni-Silicide contacts to Si:C source/drain

    Cho, Moon Ju
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    Nouri, F.
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    Schreutelkamp, Rob
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    Kim, Y.
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    Mertens, Sofie  
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    Verheyen, Peter  
    Journal article
    2007, Semiconductor Fabtech, 34, p.92-98
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    Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

    Rothschild, Aude
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    Kraus, P.A.
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    Chua, T.C.
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    Nouri, F.
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    Cubaynes, Florence
    ;
    Veloso, Anabela  
    Proceedings paper
    2004, Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, 10/04/2004, p.49-53

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