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Browsing by Author "O'Neill, A.G."

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    1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

    Yan, L.
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    Simoen, Eddy  
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    Olsen, S.H.
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    Akheyar, Amal
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    Claeys, Cor
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    O'Neill, A.G.
    Journal article
    2009, Solid-State Electronics, (53) 11, p.1177-1182
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    Application of a nano-mechanical sensor to monitor stress in copper damascene interconnects

    Wilson, Chris  
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    Croes, Kristof  
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    Tokei, Zsolt  
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    Vereecke, Bart  
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    Beyer, Gerald  
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    O'Neill, A.G.
    Journal article
    2009, Applied Physics Express, (2) 9, p.96503
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    In-situ growth of Cu-Mn alloy self-forming barriers in 100 nm Cu/Low-k damascene interconnects

    Wilson, Chris  
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    Volders, Henny  
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    Tokei, Zsolt  
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    Croes, Kristof  
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    Pantouvaki, Marianna  
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    Beyer, Gerald  
    Oral presentation
    2009, 18th Workshop Materials for Advanced Metallization - MAM
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    Quantifying self-heating effects with scaling in globally strained Si MOSFETS

    Agaiby, R.
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    Yang, Y.
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    Olsen, S.H.
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    O'Neill, A.G.
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    Eneman, Geert  
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    Verheyen, Peter  
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    Loo, Roger  
    Journal article
    2007, Solid-State Electronics, (51) 11_12, p.1473-1478
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    Strained Si/SiGe MOS technology

    Olsen, S.
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    Yan, L.
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    Agaiby, R.
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    Escobedo-Cousin, E.
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    O'Neill, A.G.
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    Hellstrom, P.-E.
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    Ostling, M.
    Oral presentation
    2007, 4th International Symposium on Advanced Gate Stack technology
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    Synchrotron measurement of the effect of line-width scaling on stress in advanced Cu/Low-k interconnects

    Wilson, Chris  
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    Croes, Kristof  
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    Zhao, Chao
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    Metzger, T.H.
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    Zhao, Larry
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    Beyer, Gerald  
    Journal article
    2009, Journal of Applied Physics, (106) 5, p.53524
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    Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers

    Escobedo-Cousin, E.
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    Olsen, S.H.
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    Dobrosz, P.
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    Bull, S.J.
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    O'Neill, A.G.
    ;
    Coulson, H.
    ;
    Claeys, Cor
    Journal article
    2007, Journal of Applied Physics, (102) 12, p.123502

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