Browsing by Author "Padovani, Andrea"
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Publication A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
Journal article2011, IEEE Transactions on Electron Devices, (58) 9, p.3147-3155Publication A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Journal article2019, IEEE Transactions on Electron Devices, (66) 4, p.1892-1998Publication Defect spectroscopy from electrical measurements: a simulation based technique
Proceedings paper2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM, 13/03/2018, p.145-147Publication Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors
Publication Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Journal article2012, Applied Physics Letters, (101) 5, p.53505Publication Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Journal article2010, IEEE Electron Device Letters, (31) 9, p.936-938Publication Role of defects in the reliability of HfO2/Si-based spacer dielectric stacks for local interconnects
Proceedings paper2019, IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-6Publication Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability
Proceedings paper2010, 48th Annual IEEE International Reliability Physics Symposium - IRPS, 2/05/2010, p.731-737Publication Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.7C.1