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Browsing by Author "Parker, E.H.C."

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    Strained Si/SiGe MOS technology

    Olsen, S.
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    Yan, L.
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    Agaiby, R.
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    Escobedo-Cousin, E.
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    O'Neill, A.G.
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    Hellstrom, P.-E.
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    Ostling, M.
    Oral presentation
    2007, 4th International Symposium on Advanced Gate Stack technology
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    Strained Si/SiGe MOS technology: improving gate dielectric integrity

    Olsen, S.H.
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    Yan, L.
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    Agaiby, R.
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    Escobedo-Cousin, A.G.
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    O'Neil, A.G.
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    Hellstrom, P.E.
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    Ostling, M.
    Journal article
    2009, Microelectronic Engineering, (86) 3, p.218-223
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    Strained silicon SiGe HFETs for microwave applications

    König, U.
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    Herzog, H.-J.
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    Aniel, F.
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    Kasper, E.
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    De Meyer, Kristin  
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    Rabe, W.J.
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    Schumacher, H.
    Oral presentation
    2003, 33rd European Microwave Conference (EuMC)
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    TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

    Norris, D.J.
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    Walther, T.
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    Cullis, A.G.
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    Myronov, M.
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    Dobbie, A.
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    Whall, T.
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    Parker, E.H.C.
    Journal article
    2010, Journal of Physics Conference Series, (209) 1, p.12061
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    TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

    Norris, D.J.
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    Ross, I.M.
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    Cullis, A.G.
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    Walther, T.
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    Myronov, M.
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    Dobbie, A.
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    Whall, T.
    Journal article
    2010, Journal of Physics Conference Series, (241) 1, p.12044
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    The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

    Beer, C.S.
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    Whall, T.E.
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    Parker, E.H.C.
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    Leadley, D.R.
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    De Jaeger, Brice  
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    Nicholas, Gareth
    Proceedings paper
    2008, 9th International Conference on Ultimate Integration of Silicon - ULIS, 12/03/2008, p.19-22

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