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Browsing by Author "Pena, Vanessa"

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    3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors

    Eyben, Pierre  
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    Ritzenthaler, Romain  
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    De Keersgieter, An  
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    Chiarella, Thomas  
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    Veloso, Anabela  
    Proceedings paper
    2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.238-241
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    Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets

    Veloso, Anabela  
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    Simoen, Eddy  
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    Oliveira, Alberto
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    Vaisman Chasin, Adrian  
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    Chen, S.-C.
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    Lin, Y.
    Proceedings paper
    2019, 2019 International Conference on Solid State Devices and Materials (SSDM 2019), 2/09/2019, p.559-560
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    Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

    Guo, Weiming
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    Date, Lucien  
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    Pena, Vanessa  
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    Bao, X.
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    Merckling, Clement  
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    Waldron, Niamh  
    Journal article
    2014, Applied Physics Letters, (105) 6, p.62101
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    Si/SiGe superlattice I/O finFETs in a vertically-stacked gate-all-around horizontal nanowire technology

    Hellings, Geert  
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    Mertens, Hans  
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    Subirats, Alexandre
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    Simoen, Eddy  
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    Schram, Tom  
    Proceedings paper
    2018, IEEE Symposium on VLSI Technology, 14/06/2018, p.85-86
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    Vertically stacked gate-all-around Si nanowire CMOS transistors with reduced nanowires separation, new work function metal gate solutions, and DC/AC performance optimization

    Ritzenthaler, Romain  
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    Mertens, Hans  
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    Pena, Vanessa  
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    Santoro, Gaetano  
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    Vaisman Chasin, Adrian  
    Proceedings paper
    2018, IEEE International Electron Devices Meeting - IEDM, 2/12/2018, p.508-511
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    Vertically stacked gate-all-around Si nanowire transistors: key process optimizations and ring oscillator demonstration

    Mertens, Hans  
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    Ritzenthaler, Romain  
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    Pena, Vanessa  
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    Santoro, Gaetano  
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    Kenis, Karine  
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.828-831

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