Browsing by Author "Poyai, Amporn"
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Publication Activation energy analysis as a tool for extraction and investigation of p-n junction leakage current components
Journal article2003, Journal of Applied Physics, (94) 2, p.1218-1221Publication Analysis of the diffusion currrent in cobalt silicided n+p junctions
Meeting abstract1998, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 19/05/1998, p.CM34Publication Assessment of radiation induced lattice damage in shallow trench isolation diodes irradiated by neutrons
Oral presentation2000, BIAMS - 6th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors; 12-16 November 2000; FukuoPublication Current transients in almost-ideal Czochralski silicon p-n junction diodes
Journal article1999, Appl. Phys. Lett., (75) 21, p.3342-3344Publication Defect assessment in advanced semiconductor materials and devices
Poyai, AmpornPHD thesis2002-11Publication Defect assessment of irradiated STI Diodes
Journal article2002, Nuclear Instruments & Methods in Physics Research B, (186) 1_4, p.424-428Publication Defect assessment of irradiated STI diodes
Oral presentation2001, Symposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices; June 5-8, 2001; Strasbourg,Publication Diode analysis of advanced processing modules for deep-submicrometer CMOS technology nodes
Journal article2003, Journal of the Electrochemical Society, (150) 12, p.G795-G806Publication Diode analysis of deep submicron CMOS p-well implantation damage
Proceedings paper2002, High Purity Silicon VII, 20/10/2002, p.266-277Publication Diode analysis of high-energy boron implantation-induced P-well defects
Journal article2001, Journal of the Electrochemical Society, (148) 9, p.G507-G512Publication Diode analysis of silicon substrate quality
Proceedings paper1999, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, 16/09/1999, p.248-258Publication Diode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines
Proceedings paper1998, 2nd International Conference on Materials for Microelectronics - ICMM, 14/09/1998, p.42-51Publication Effect of forward current excess-carrier injection on the diode I-V characteristics
Meeting abstract2001, General Scientific Meeting. Belgische Natuurkundige Vereniging, 16/05/2001, p.CM48Publication Effect of shallow junction on the extraction of the minority carrier recombination lifetime from forward diode characteristics
Meeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-14Publication Electrical characterisation of shallow cobalt-silicided junctions
Proceedings paper2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.7-10Publication Electrical characterization of shallow cobalt-silicided junctions
Journal article2001, Journal of Materials Science: Materials in Electronics, (12) 4_6, p.207-10Publication Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics
Journal article1999, J. Electrochem. Soc., (146) 9, p.3429-3434Publication Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Oral presentation2002, E-MRS Spring Meeting Symposium E: Advanced Characterisation of Semiconductor Materials and DevicesPublication Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Journal article2003, Materials Science and Engineering B, (102) 1_3, p.189-192Publication Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions
Journal article2003, IEEE Trans. Nuclear Science, (50) 2, p.278-287