Browsing by Author "Prager, Lutz"
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Publication Application of UV irradiation in removal of post-etch 193 nm photoresist
Proceedings paper2009, Materials, Processes and Reliability for Advanced Interconnects for Micro and Nanoelectronics, 13/04/2009, p.D02-09Publication Effect of pressure on efficiency of UV curing of CVD low-k material at different wavelengths
;Prager, Lutz ;Naumov, Sergei ;Pistol, L. ;Wennrich, L. ;Buchmeister, M. R.Marsik, PremyslMeeting abstract2008, 17th Workshop Materials for Advanced Metallization, 2/03/2008Publication Effect of radical scavenger and UV irradiation on removal of photoresist and BARC using water/ozone in Cu/low-k interconnect
Proceedings paper2009, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11, 4/10/2009, p.71-77Publication Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films
Journal article2016, Applied Physics Letters, (108) 1, p.12902Publication Impact of UV wavelength and curing time on the properties of spin-coated low-k films
Proceedings paper2015, IEEE International Interconnect Technology Conference - IITC / Materials for Advanced Metallization Conference - MAM, 19/05/2015, p.99-102Publication Modification of 193-nm photoresist by UV irradiation for post-etch wet strip applications
Meeting abstract2009, 2nd International Plasma Etch and Strip in Microelectronics Workshop - PESM, 26/02/2009Publication Modification of photoresist by UV for post-etch wet strip applications
Journal article2009, Solid State Phenomena, 145-146, p.323-326Publication Removal of post-etch 193 nm photoresist in porous low-k dielectric patterning using UV irradiation and wet chemistries
Proceedings paper2009, Sematech Surface Preparation and Cleaning Conference - SPCC, 23/03/2009Publication Removal of post-etch 193-nm photoresist in porous low-k dielectric patterning using UV irradiation and ozonated water
Journal article2010, Microelectronic Engineering, (87) 9, p.174-1679Publication UV cure of oxycarbosilane low-k films
Journal article2016, Microelectronic Engineering, 156, p.103-107