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Browsing by Author "Ramos, Javier"

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    90nm RF CMOS technology for low-power 900MHz applications

    Ramos, Javier
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    Mercha, Abdelkarim  
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    Jeamsaksiri, Wutthinan
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    Linten, Dimitri  
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    Jenei, Snezana
    Proceedings paper
    2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.329-332
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    A 328 uW5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor

    Linten, Dimitri  
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    Sun, Xiao  
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    Carchon, Geert
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    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
    Proceedings paper
    2004-06, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference - CICC, 17/06/2004, p.701-704
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    A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    Linten, Dimitri  
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    Thijs, Steven  
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    Mahadeva Iyer, Natarajan Mahadeva Iyer
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    Wambacq, Piet  
    Journal article
    2005-06, IEEE Journal of Solid-State Circuits, (40) 7, p.1434-1442
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    A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    Linten, Dimitri  
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    Thijs, Steven  
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    Mahadeva Iyer, Natarajan
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    Wambacq, Piet  
    Proceedings paper
    2004-09, Proceedings of the 30th European Solid-State Circuits - ESSCIRC, 20/09/2004, p.291-294
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    A 90nm RF CMOS technology supported by device modelling and circuit demonstrators

    Ramos, Javier
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    Mercha, Abdelkarim  
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    Jeamsaksiri, Wutthinan
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    Linten, Dimitri  
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    Jenei, Snezana
    Oral presentation
    2004, MOS-AK/ESSCIRC Workshop
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    A low cost 90nm RF-CMOS platform for record RF circuit performance

    Jeamsaksiri, Wutthinan
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    Linten, Dimitri  
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    Thijs, Steven  
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    Carchon, Geert
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    Ramos, Javier
    Proceedings paper
    2005-06, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.60-61
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    Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

    San Andres Serrano, Enrique
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    Pantisano, Luigi
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    Ramos, Javier
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    Roussel, Philippe  
    Journal article
    2007, IEEE Trans. Electron Devices, (54) 7, p.1705-1712
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    An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90nm RF CMOS

    Linten, Dimitri  
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    Thijs, Steven  
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    Jeamsaksiri, Wutthinan
    ;
    Ramos, Javier
    ;
    Mercha, Abdelkarim  
    Proceedings paper
    2005-06, Symposium on VLSI Circuits Technical Digest, 16/06/2005, p.86-89
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    Class 3 HBM and class C MM ESD protected 5.5 GHz LNA in 90 nm RF CMOS using above-IC inductors

    Thijs, Steven  
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    Linten, Dimitri  
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    Mahadeva Iyer, Natarajan
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    Jeamsaksiri,
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    Mercha, Abdelkarim  
    Proceedings paper
    2005, Proceedings 27th Annual EOS/ESD Symposium, 11/09/2005, p.1A.4
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    Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices

    Severi, Simone  
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    Kottantharayil, Anil
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    Pawlak, Bartek  
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    Duffy, Ray
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    Henson, K.
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    Lindsay, R.
    Proceedings paper
    2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.99-102
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    FUSI specific yield monitoring enabling improved circuit performance and fast feedback to production

    Chiarella, Thomas  
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    Rosmeulen, Maarten  
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    Tigelaar, Howard
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    Kerner, Christoph  
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    Nackaerts, Axel
    Proceedings paper
    2007-03, 20th IEEE International Conference on Microelectronic Test Structures - ICMTS, 20/03/2007, p.33-36
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    Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA

    Ramos, Javier
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    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
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    Thijs, Steven  
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    Linten, Dimitri  
    Proceedings paper
    2005, Proceedings IEEE VLSI-TSA International Symposium on VLSI Technology, 25/04/2005, p.64-65
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    Impact of remote plasma nitridation (RPN) on the Low-frequency noise (1/f)

    Ramos, Javier
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    Jeamsaksiri, Wutthinan
    Oral presentation
    2003, High Frequency Device Modelling Workshop
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    Impact of scaling on analog/RF CMOS performance

    Mercha, Abdelkarim  
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    Jeamsaksiri, Wutthinan
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    Ramos, Javier
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    Linten, Dimitri  
    ;
    Jenei, Snezana
    Proceedings paper
    2004-10, The 7th International Conference on Solid-State and Integrated-Circuit Technology, 18/10/2004, p.147-152
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    Impact of scaling on analog/RF CMOS performance

    Mercha, Abdelkarim  
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    Jeamsaksiri, Wutthinan
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    Ramos, Javier
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    Linten, Dimitri  
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    Jenei, Snezana
    Proceedings paper
    2004, 3rd International Symposium on Information and Communication Technologies - ISICT, 16/06/2004
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    Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA

    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
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    Ramos, Javier
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    Linten, Dimitri  
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    Thijs, Steven  
    Proceedings paper
    2004, Technical Digest VLSI Technology Symposium, 15/06/2004, p.100-101
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    Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

    Linten, Dimitri  
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    Aspemyr, Lars
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    Jeamsaksiri, Wutthinan
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    Ramos, Javier
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    Mercha, Abdelkarim  
    Proceedings paper
    2004-06, Technical Digest Symposium on VLSI Circuits, 15/06/2004, p.372-375
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    Low-power voltage-controlled oscillators in 90 nm CMOS using high-quality thin-film post-processed inductors

    Linten, Dimitri  
    ;
    Sun, Xiao  
    ;
    Carchon, Geert
    ;
    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
    Journal article
    2005-09, IEEE Journal of Solid State Circuits, (40) 9, p.1922-1931
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    On the scalability of source/drain current enhancement in thin film sSOI

    Augendre, Emmanuel
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    Eneman, Geert  
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    De Keersgieter, An  
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    Simons, Veerle  
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    De Wolf, Ingrid  
    Proceedings paper
    2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 13/09/2005, p.301-304
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    Optimal frequency range selection for full C-V characterization above 45MHz for ultra thin (1.2-nm) nitrided oxide MOSFETs

    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
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    Ramos, Javier
    ;
    Decoutere, Stefaan  
    Proceedings paper
    2004, Proceedings of the International Conference on Microelectronic Test Structures - ICMTS, 22/03/2004, p.297-301
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