Browsing by Author "Rathi, Aarti"
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Publication Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
; ; ;Alian, Alireza; ; Journal article2024, MICROMACHINES, (15) 8, p.Art. 951Publication Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applications
Journal article2021, SOLID-STATE ELECTRONICS, 185, p.108089Publication DC Reliability study of high-k GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers
Proceedings paper2024, International Reliability Physics Symposium (IRPS), 2024-04-14Publication Evolution of GaN HEMT Small-Signal parameters during semi-on state for RF/mm-wave applications
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30Publication Evolution of GaN HEMT Small-Signal parameters during semi-on state for RF/mm-wave applications
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30Publication Perspectives on GaN MISHEMT Power Amplifier versus Positive Gate Bias Instability
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30Publication Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
; ; ; ; ; ;Alian, AlirezaWu, Tian-LIJournal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 12, p.7308-7313Publication Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30