Browsing by Author "Rathi, Aarti"

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers

Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3-4 nm wide fins and 20 nm gate length for quantum computing applications

DC Reliability study of high-k GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers

Dynamic ON-State Breakdown of GaN-on-Si HEMT

Evolution of GaN HEMT Small-Signal parameters during semi-on state for RF/mm-wave applications

Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe:B Source/Drain

Load Pull Driven Insights for GaN on Si Technology Optimisation at FR3/FR2

Perspectives on GaN MISHEMT Power Amplifier versus Positive Gate Bias Instability

Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress

Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses

Understanding Gate Breakdown Mechanisms in RF GaN MIS-HEMTs with thin gate SiN