Browsing by Author "Reisinger, H."
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Publication A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Proceedings paper2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.XT.13Publication Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy
Publication Characterization and modeling of charge trapping: From single defects to devices
Proceedings paper2014, IEEE International Conference on IC Design & Technology - ICICDT, 28/05/2014, p.1-4Publication Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Publication Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Publication Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Publication NBTI in nanoscale MOSFETs – The ultimate modeling menchmark
Journal article2014, IEEE Transactions on Electron Devices, (61) 11, p.3586-3593Publication Physical modeling of NBTI: from individual defects to devices
Proceedings paper2014, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2014, p.81-84Publication Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.801-804Publication The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing