Browsing by Author "Roelofs, Robin"

Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs