Browsing by Author "Schrimpf, R."
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Publication Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications
;Bennett, W. ;Hooten, N. ;Schrimpf, R. ;Reed, R. ;Alles, M. ;Zhang, E.X.Weeden-Wright, S.Proceedings paper2014, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 14/09/2014, p.10-19Publication Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM
Proceedings paper2014, Aerospace Conference, 1/03/2014Publication Geometry dependence of total dose effects in bulk FINFETs
;Chatterjee, I ;Zhang, E.X. ;Buva, B. L. ;Reed, Robert ;Alles, M. L. ;Nahatme, N. N.BAll, D. R.Journal article2014, IEEE Transactions on Nuclear Science, (61) 6, p.2951-2958Publication Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
;Gong, H. ;Ni, K. ;Zhang, E.X. ;Sternberg, A. L. ;Kuzub, J.A. ;Alles, M.L. ;Reed, R.Fleetwood, D.Journal article2019, IEEE Transactions on Nuclear Science, (66) 1, p.376-383Publication Radiation hardness of SiGe and Ge-based CMOS technologies
Proceedings paper2011, 26th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2011, p.17-30Publication Single- and multiple-event induced upsets in HfO2/Hf 1T1R RRAM
;Bennett, W. ;Hooten, N. ;Schrimpf, R. ;Reed, R. ;Mendenhall, M.H. ;Alles, M. ;Bi, J.Zhang, E.Journal article2014, IEEE Transactions on Nuclear Science, (61) 4, p.1717-1725Publication Total-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors
;Gorchichko, Maria ;Zhang, E.X. ;Wang, P. ;Schrimpf, R. ;Reed, R. ;Fleetwood, D.M.Bonaldo, S.Proceedings paper2020, Nuclear & Space Radiation Effects Conference - NSREC, 20/07/2020, p.C-4