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Browsing by Author "Schuler, Franz"

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    A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage

    Breuil, Laurent  
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    Schuler, Franz
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    De Vos, Joeri  
    Proceedings paper
    2003, 19th IEEE Nonvolatile Semiconductor Memory Workshop - NVSMW, 16/02/2003, p.46-47
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    Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

    Degraeve, Robin  
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    Schuler, Franz
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    Lorenzini, Martino
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    Wellekens, Dirk  
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    Hendrickx, Paul  
    Proceedings paper
    2001, IEDM Technical Digest, 2/12/2001, p.699-702
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    Analytical percolation model for predicting anomalous charge loss in flash memories

    Degraeve, Robin  
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    Schuler, Franz
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    Kaczer, Ben  
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    Lorenzini, Martino
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    Wellekens, Dirk  
    Journal article
    2004, IEEE Trans. Electron Devices, (51) 9, p.1392-1400
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    Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model

    Schuler, Franz
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    Tempel, Georg
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    Melzner, H.
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    Jacob, M.
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    Hendrickx, Paul  
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    Wellekens, Dirk  
    Journal article
    2002, Japanese Journal of Applied Physics. Part 1, (41) 4B, p.2650-2653
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    Field and cycling dependence of anomalous charge loss in flash memory cells

    Wellekens, Dirk  
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    Hendrickx, Paul  
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    Schuler, Franz
    ;
    Van Houdt, Jan  
    Proceedings paper
    2001, IEEE Nonvolatile Semiconductor Memory Workshop, 12/08/2001
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    Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells

    Schuler, Franz
    ;
    Degraeve, Robin  
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    Hendrickx, Paul  
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    Wellekens, Dirk  
    Journal article
    2002, IEEE Trans. Device and Materials Reliability, (2) 4, p.80-88
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    Physical description of anomalous charge loss in floating gate based NVM and identification of its dominant parameter

    Schuler, Franz
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    Degraeve, Robin  
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    Hendrickx, Paul  
    ;
    Wellekens, Dirk  
    Proceedings paper
    2002, 40th Annual Reliability Physics Symposium Proceedings, p.26-33
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    Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers

    Degraeve, Robin  
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    Kaczer, Ben  
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    Schuler, Franz
    ;
    Lorenzini, Martino
    ;
    Wellekens, Dirk  
    Proceedings paper
    2001, IEDM Technical Digest, 2/12/2001, p.121-4
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    Time dependent anomalous charge loss modeling in flash memories and an accelerated testing procedure

    Schuler, Franz
    ;
    Tempel, Georg
    ;
    Melzner, H.
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    Hendrickx, Paul  
    ;
    Wellekens, Dirk  
    ;
    Lorenzini, Martino
    Proceedings paper
    2001, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials - SSDM, p.536-537

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