Browsing by Author "Seefeldt, Marc"
- Results Per Page
- Sort Options
Publication Evolution of (001) and (111) facets for selective epitaxial growth inside Submicron trenches
Journal article2014, Journal of Applied Physics, (115) 2, p.23517Publication Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Journal article2014, Journal of Crystal Growth, 391, p.59-63Publication Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate
Meeting abstract2014, ECS and SMEQ Joint International Meeting, 5/10/2014Publication Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates
Proceedings paper2014, SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices, 5/10/2014, p.501-511Publication Nucleation behavior of III/V crystal selectively grown inside nano-trenches: the influence of trench width
Journal article2015, ECS Journal of Solid State Science and Technology, (4) 7, p.N83-N87Publication Selective area growth of high quality InP on Si (001) substrates
Journal article2010-09, Applied Physics Letters, (97) 12, p.121913-1Publication Selective area growth of InP and defect elimination on Si (001) substrates
Journal article2011, Journal of the Electrochemical Society, (158) 6, p.H645-H650Publication Simulation of Cu bulge-out by cyclic Cu surface diffusion FEM in Cu/SiCN hybrid bonding
; ; ; Proceedings paper2023, 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), APR 16-19, 2023Publication Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding
Journal article2022, MICROELECTRONICS RELIABILITY, 138, p.114716