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Browsing by Author "Shimura, Y."

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    Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

    Takeuchi, S.
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    Shimura, Y.
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    Nishimura, T.
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    Vincent, Benjamin  
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    Eneman, Geert  
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    Clarysse, Trudo
    Meeting abstract
    2010, 218th ECS Meeting, 10/10/2010, p.1909
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    Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    Vincent, Benjamin  
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    Shimura, Y.
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    Takeuchi, Shotaro
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    Nishimura, T.
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    Eneman, Geert  
    Journal article
    2011, Microelectronic Engineering, (88) 4, p.342-346
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    Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    Vincent, Benjamin  
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    Shimura, Y.
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    Takeuchi, S.
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    Nishimura, T.
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    Demeulemeester, J.
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    Eneman, Geert  
    Meeting abstract
    2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials, 7/06/2010
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    Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor

    Nishimura, T.
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    Nakatsuka, O.
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    Shimura, Y.
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    Takeuchi, S.
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    Vincent, Benjamin  
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    Vantomme, Andre  
    Oral presentation
    2010, 10th Chubu - Local Meeting of The Surface Science Society of Japan
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    GeSn technology: impact of Sn on Ge CMOS applications

    Zaima, S.
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    Nakatsuka, O.
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    Shimura, Y.
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    Adachi, M.
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    Nakamura, M.
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    Takeuchi, S.
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    Vincent, Benjamin  
    Proceedings paper
    2011, ULSI Process Integration 7, 9/10/2011, p.231-238
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    GeSn Technology: Impact of Sn on Ge CMOS Applications

    Zaima, S.
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    Natasuka, O.
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    Shimura, Y.
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    Takeuchi, S.
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    Vincent, Benjamin  
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    Gencarelli, Federica
    Meeting abstract
    2011, 220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7, 9/10/2011, p.2132
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    Impact of Sn on Ga activation in heteroepitaxial Ge1-xSnx layer

    Shimura, Y.
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    Nakatsuka, O.
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    Vincent, Benjamin  
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    Gencarelli, Federica
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    Clarysse, Trudo
    Proceedings paper
    2012, 59th Spring Meeting of the Japan Society of Applied Physics, 15/03/2012
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    In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    Shimura, Y.
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    Takeuchi, Shotaro
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    Nakatsuka, O.
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    Vincent, Benjamin  
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    Gencarelli, Federica
    Journal article
    2012, Thin Solid Films, (520) 8, p.3206-3210
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    MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers

    Shimura, Y.
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    Nakamura, M.
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    Asano, T.
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    Takeuchi, S.
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    Nakatsuka, O.
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    Vincent, Benjamin  
    Meeting abstract
    2011-09, The 2nd GeSn workshop: GeSn Developments and Future Applications, 2/09/2011
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    Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

    Merckling, Clement  
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    Sun, Xiao  
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    Shimura, Y.
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    Franquet, Alexis  
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    Vincent, Benjamin  
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    Takeuchi, S.
    Journal article
    2011, Applied Physics Letters, (98) 19, p.192110
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    Molecular beam passivation of Ge compounds: surface, interface & gate stack studies

    Merckling, Clement  
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    Sun, X.
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    Shimura, Y.
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    Franquet, Alexis  
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    Vincent, Benjamin  
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    Takeuchi, Shotaro
    Meeting abstract
    2011-09, The 2nd GeSn Workshop: GeSn Developments and Future Applications, 2/09/2011
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    Towards an understanding of the atomic-scale surface properties of Ge1-xSnx films

    Fleischmann, Claudia  
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    Seidel, F.
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    Merckling, Clement  
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    Vincent, Benjamin  
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    Gencarelli, Federica
    Meeting abstract
    2011-09, The 2nd GeSn workshop: GeSn Developments and Future Applications, 2/09/2011

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