Browsing by Author "Sijmus, Bram"
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Publication AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Proceedings paper2007, 12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII, 3/06/2007Publication AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Journal article2008, Japanese Journal of Applied Physics, (47) 3, p.1553-1555Publication AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
Publication Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109
Journal article2002, Microelectronic Engineering, (64) 1_4, p.25-33Publication CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Proceedings paper2005-12, Technical Digest International Electron Devices Meeting - IEDM, 5/12/2005, p.661-664Publication Copper CMP using a Lam teres linear planarization technology
Oral presentation2001, 6th International Chemical-Mechanical Polish (C.M.P.) Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC) andPublication Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices
Proceedings paper2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.99-102Publication Epitaxial growth of III-nitrides on silicon substrates
Proceedings paper2010, SiGe, Ge, and Related Compounds 4: Materials, Processing and Devices, 10/10/2010, p.833-842Publication Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Proceedings paper2007, 7th International Conference on Nitride Semiconductors - ICNS-7, 16/09/2007Publication Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Journal article2008, Physica Status Solidi C, (5) 6, p.1624-1626Publication GaN-on-Si for high-voltage applications
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E: GaN and SiC Power Technologies, 9/10/2011, p.2173Publication GaN-on-Si for high-voltage applications
Proceedings paper2011, Gallium Nitride and Silicon Carbide Power Technologies, 9/10/2011, p.101-112Publication GaN-on-Si for power conversion
Proceedings paper2010, The International Conference on Compound Semiconductor Manufacturing Technology - CSMANTECH, 17/05/2010, p.225-228Publication GaN-on-Si power field effect transistors
Publication Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
; Publication High quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPE
Oral presentation2007, E-MRS Spring Meeting Symposium F: Novel Gain Materials and Devices Based on III-N-V CompoundsPublication Highly reliable and extremely stable SiGe micro-mirrors
Proceedings paper2007-01, Technical Digest 20th IEEE International Micro Electro Mechanical Systems Conference - MEMS, 21/01/2007, p.759-762Publication Impact of LKD5109 low-k to cap/liner interfaces in single damascene process and performance
Journal article2003, Microelectronic Engineering, (70) 2_4, p.293-301Publication Influence of growth temperature on buffer leakage current of AlGaN/GaN/AlGaN DH-FET grown on silicon substrates
Oral presentation2011, 9th International Conference on Nitride Semiconductors - ICNS-9Publication Integration feasibility of porous SiLK semiconductor dielectric
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