Browsing by Author "Storck, Peter"
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Publication Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration
; ; ; ; ; Proceedings paper2020-09, PRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16, 4/10/2020, p.157-166Publication Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration
; ; ; ; ; Meeting abstract2020-07, ECS 2020 Fall Meeting (PRiME): Symposium G01 Semiconductor Wfr Bonding; Science Technology and Applications 16, 4/10/2020, p.G03-1640Publication Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70 - 85% Ge
Proceedings paper2010-05, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate deposition
; ; ; ; ; Journal article2017, IEEE Transactions on Electron Devices, (64) 4, p.4587-4593Publication Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition
Proceedings paper2017-06, Symposium on VLSI Technology, 5/06/2017, p.194-195