Browsing by Author "Suhane, Amit"
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Publication Characterization and optimization of charge-trap based NAND flash memories
Suhane, AmitPHD thesis2012-09Publication Effect of high temperature annealing on tunnel oxide properties in TANOS devices
Journal article2011, Microelectronic Engineering, (88) 7, p.1155-1158Publication Electron trap profiling near Al2O3/ gate interface in TANOS stack using gate-side-trap spectroscopy by charge injection and sensing
Journal article2010, IEEE Electron Device Letters, (31) 10, p.1158-1160Publication Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Journal article2010, IEEE Electron Device Letters, (31) 9, p.936-938Publication Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories
Proceedings paper2009, 39th European Solid-State Device Research Conference - ESSDERC, 14/09/2009, p.276-279Publication First-principles study of oxygen and aluminum defects in $b-Si3N4: Compensation and charge trapping
;Grillo, Maria Elena ;Elliott, Simon D. ;Rodriguez, Jesus ;Anez, RafaelColl, David SantiagoJournal article2014, Computational Materials Science, 81, p.178-183Publication High performance THANVaS memories for MLC charge trap NAND flash
Proceedings paper2011, 3rd International Memory Workshop - IMW, 22/05/2011, p.69-72Publication Investigation of rare-earth aluminates as alternative trapping materials in flash memories
Proceedings paper2010, 40th European Solid-State Device Research Conference - ESSDERC, 13/09/2010, p.436-439Publication Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications
Proceedings paper2010, 11th International Conference on Ultimate Integration on Silicon - ULIS, 17/03/2010, p.101-104Publication Optimization of the crystallization phase of rare-earth aluminates for blocking dielectric application in TANOS type Flash memories
Proceedings paper2010, 40th European Solid-State Device Research Conference - ESSDERC, 13/09/2010, p.440-443Publication Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.902Publication Rare-earth aluminates as a charge trapping materials for NAND Flash memories: Integration and electrical evaluation
Journal article2011, Solid-State Electronics, 65-66, p.177-183Publication Statistical characterization of current paths in narrow poly-si channels
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.287-290Publication Understanding the impact of metal gate on TANOS performance and retention
Proceedings paper2010, IEEE International Memory Workshop - IMW, 16/05/2010, p.110-113Publication Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories
Journal article2010, IEEE Electron Device Letters, (31) 1, p.77-79