Browsing by Author "Takakura, Kenichiro"

Frontiers in low-frequency noise research in advanced semiconductor devices

Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

Improvement of the crystalline quality of β-Ga2O3 films by high-temperature annealing

Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation

Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation

Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications

Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation

Radiation influence on the electrical properties of n-channel UTBOX SOI GAAFETs by 2 MeV electron irradiation

Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations

Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation

Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

XRD investigation of the crystalline quality of Sn-doped β-Ga2O3 films deposited by the RF magnetron sputtering method